JPS6430257A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6430257A JPS6430257A JP62187199A JP18719987A JPS6430257A JP S6430257 A JPS6430257 A JP S6430257A JP 62187199 A JP62187199 A JP 62187199A JP 18719987 A JP18719987 A JP 18719987A JP S6430257 A JPS6430257 A JP S6430257A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- nitride film
- region
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 6
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To simplify a manufacturing process by a method wherein each ion- implantation region is determined through two masking processes for the element isolation and the formation of a well region. CONSTITUTION:A silicon dioxide film 2 and a silicon nitride film 3 are formed on an N-type silicon substrate 1, a part of the silicon nitride film 3 is removed which is to be an element isolation region, and then a silicon nitride film 4 is deposited thereon. A photoresist film 5 is formed which has an opening provided for a P well forming region, the silicon nitride film 4 and the silicon dioxide film 2 are subjected to etching through the photoresist film 5 used as a mask, the ion-implantation of boron is performed, and then the photoresist 5 is removed, the implanted boron is driven in for the formation of a P well 6, and thereafter a silicon dioxide film 8a and a diffusion layer 7 are formed through the selective oxidation. The silicon nitride film 4 is removed, the silicon nitride film 3 is patially removed, P<+> ions are implanted through the film 3 left unremoved as a mask, a channel stopper on the P channel side is formed, and then oxidation is partially performed for the formation of an isolation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187199A JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62187199A JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430257A true JPS6430257A (en) | 1989-02-01 |
Family
ID=16201828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62187199A Pending JPS6430257A (en) | 1987-07-27 | 1987-07-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430257A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168254A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-27 JP JP62187199A patent/JPS6430257A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168254A (en) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | Manufacture of semiconductor device |
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