JPS6430283A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6430283A
JPS6430283A JP18683887A JP18683887A JPS6430283A JP S6430283 A JPS6430283 A JP S6430283A JP 18683887 A JP18683887 A JP 18683887A JP 18683887 A JP18683887 A JP 18683887A JP S6430283 A JPS6430283 A JP S6430283A
Authority
JP
Japan
Prior art keywords
al2o3
reflectance
lambda
sio2
control film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18683887A
Other languages
Japanese (ja)
Inventor
Hitoshi Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP18683887A priority Critical patent/JPS6430283A/en
Publication of JPS6430283A publication Critical patent/JPS6430283A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To control a reflectance to be lower than 2-3% which is said to be a limit as a countermeasure against a tracking balance error even if there is the variation of the thickness of a reflectance control film by a method wherein the reflectance control film is composed of multilayered films made of Al2O3, SiO2 and Al2O3 with the respective thicknesses of lambda/4n (wherein (n) denotes the refractive index of each film and lambda denotes a laser oscillation wavelength). CONSTITUTION:A reflectance control film composed of multilayered films made of Al2O3 2, SiO2 3 and Al2O3 4 with the respective thicknesses of lambda/4n is provided on the edge face of a semiconductor laser device. As the multilayered films made of Al2O3, SiO2 and Al2O3 with the respective thicknesses of lambda/4n are provided on a part of an edge face protective film, the reflectance can be controlled to be lower than 2-3% which is said to be a limit as a countermeasure against a tracking balance error regardless of the variation of the thickness of the reflectance control film.
JP18683887A 1987-07-27 1987-07-27 Semiconductor laser device Pending JPS6430283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18683887A JPS6430283A (en) 1987-07-27 1987-07-27 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18683887A JPS6430283A (en) 1987-07-27 1987-07-27 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6430283A true JPS6430283A (en) 1989-02-01

Family

ID=16195514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18683887A Pending JPS6430283A (en) 1987-07-27 1987-07-27 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6430283A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03259585A (en) * 1990-03-09 1991-11-19 Mitsubishi Electric Corp Semiconductor laser
JP2005136080A (en) * 2003-10-29 2005-05-26 Sharp Corp Semiconductor laser device, method for manufacturing the same, and optical pickup device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03259585A (en) * 1990-03-09 1991-11-19 Mitsubishi Electric Corp Semiconductor laser
JP2005136080A (en) * 2003-10-29 2005-05-26 Sharp Corp Semiconductor laser device, method for manufacturing the same, and optical pickup device

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