JPS6430423U - - Google Patents
Info
- Publication number
- JPS6430423U JPS6430423U JP12505487U JP12505487U JPS6430423U JP S6430423 U JPS6430423 U JP S6430423U JP 12505487 U JP12505487 U JP 12505487U JP 12505487 U JP12505487 U JP 12505487U JP S6430423 U JPS6430423 U JP S6430423U
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- type
- substrate
- recess
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Fluid Pressure (AREA)
Description
第１図は本考案の一実施例の要部構成説明図、
第２図は第１図の工程説明図、第３図は従来より
一般に使用されている従来例の構成説明図である
。
１１……基板、１２……凹部、１３……ダイア
フラム、１４……エピタキシアル層、１５……中
空部、１６……絶縁層、１７……導電層、１８…
…連通孔。
FIG. 1 is an explanatory diagram of the main part of an embodiment of the present invention.
FIG. 2 is an explanatory diagram of the process shown in FIG. 1, and FIG. 3 is an explanatory diagram of the configuration of a conventional example that has been commonly used. DESCRIPTION OF SYMBOLS 11... Substrate, 12... Recessed part, 13... Diaphragm, 14... Epitaxial layer, 15... Hollow part, 16... Insulating layer, 17... Conductive layer, 18...
...Communication hole.
Claims (1)
電性の半導体の基板と、該基板にダイアフラムを
形成する凹部と、該凹部と反対側の前記基板の表
面に形成された前記一方の伝導形からなるエピタ
キシヤル層と、該エピタキシヤル層の前記ダイア
フラムに対応する部分に設けられた中空部と、前
記エピタキシヤル層上に形成された絶縁材からな
る絶縁層と、該絶縁層上に形成された導電体から
なる導電層と、前記中空部と外部とを連通する連
通孔とを具備してなる静電容量形半導体圧力セン
サ。 (2) 基板としてｎ形半導体を使用し、エピタキ
シヤル層としてｎ形エピタキシヤル層を使用した
ことを特徴とする実用新案登録請求の範囲第一項
記載の静電容量形半導体圧力センサ。[Claims for Utility Model Registration] (1) A conductive semiconductor substrate of either n-type or p-type conductivity, a recess forming a diaphragm in the substrate, and a recess on the substrate opposite to the recess. an epitaxial layer formed on the surface of the one conductivity type; a hollow portion provided in a portion of the epitaxial layer corresponding to the diaphragm; and an insulating material formed on the epitaxial layer. A capacitive semiconductor pressure sensor comprising: a conductive layer made of a conductive material formed on the insulating layer; and a communication hole communicating the hollow part with the outside. (2) The capacitive semiconductor pressure sensor according to claim 1, which is characterized in that an n-type semiconductor is used as the substrate and an n-type epitaxial layer is used as the epitaxial layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987125054U JPH064304Y2 (en) | 1987-08-17 | 1987-08-17 | Capacitance type semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987125054U JPH064304Y2 (en) | 1987-08-17 | 1987-08-17 | Capacitance type semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6430423U true JPS6430423U (en) | 1989-02-23 |
| JPH064304Y2 JPH064304Y2 (en) | 1994-02-02 |
Family
ID=31375319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987125054U Expired - Lifetime JPH064304Y2 (en) | 1987-08-17 | 1987-08-17 | Capacitance type semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH064304Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002243516A (en) * | 2001-02-13 | 2002-08-28 | Denso Corp | Method for manufacturing sensor having thin film portion |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5764978A (en) * | 1980-10-03 | 1982-04-20 | Ibm | Capacitive pressure transducer |
| JPS60138434A (en) * | 1983-12-27 | 1985-07-23 | Fuji Electric Co Ltd | Manufacture of semiconductor electrostatic capacity type pressure sensor |
-
1987
- 1987-08-17 JP JP1987125054U patent/JPH064304Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5764978A (en) * | 1980-10-03 | 1982-04-20 | Ibm | Capacitive pressure transducer |
| JPS60138434A (en) * | 1983-12-27 | 1985-07-23 | Fuji Electric Co Ltd | Manufacture of semiconductor electrostatic capacity type pressure sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002243516A (en) * | 2001-02-13 | 2002-08-28 | Denso Corp | Method for manufacturing sensor having thin film portion |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH064304Y2 (en) | 1994-02-02 |