JPS6316471U - - Google Patents
Info
- Publication number
- JPS6316471U JPS6316471U JP1986110842U JP11084286U JPS6316471U JP S6316471 U JPS6316471 U JP S6316471U JP 1986110842 U JP1986110842 U JP 1986110842U JP 11084286 U JP11084286 U JP 11084286U JP S6316471 U JPS6316471 U JP S6316471U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- insulating film
- contact
- hall element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
Description
第1図イおよび第1図ロは本考案のホール素子
の断面図および平面図、第2図イおよび第2図ロ
は従来のホール素子の断面図および平面図である
。
1はホール素子、2は基板、3はN型の活性領
域、4はN+型のコンタクト領域、5は第1の絶
縁膜、6はコンタクト孔、7は第1の電極、8は
第2の絶縁膜、9はコンタクト孔、10は第2の
電極、11はフエライト、12は金属細線である
。
1A and 1B are a sectional view and a plan view of the Hall element of the present invention, and FIGS. 2A and 2B are a sectional view and a plan view of a conventional Hall element. 1 is a Hall element, 2 is a substrate, 3 is an N type active region, 4 is an N + type contact region, 5 is a first insulating film, 6 is a contact hole, 7 is a first electrode, 8 is a second , 9 is a contact hole, 10 is a second electrode, 11 is a ferrite, and 12 is a thin metal wire.
Claims (1)
、少なくとも該化合物半導体材料よりなる基板と
、該基板内に形成される一導電型の活性領域と、
該活性領域の端部に形成される高不純物濃度の一
導電型のコンタクト領域と、前記基板上に被覆さ
れる第1の絶縁膜と、該第1の絶縁膜を介して前
記コンタクト領域にオーミツクコンタクトする第
1の電極と、前記基板上に被覆される第2の絶縁
膜と、該第2の絶縁膜を介して前記第1の電極と
オーミツクコンタクトする第2の電極とを備え、
前記第1の電極は前記第2の電極より小さく形成
することを特徴としたホール素子。 In a Hall element using a compound semiconductor material, at least a substrate made of the compound semiconductor material, an active region of one conductivity type formed in the substrate,
a contact region of one conductivity type with high impurity concentration formed at the end of the active region; a first insulating film coated on the substrate; comprising a first electrode in micro-contact, a second insulating film coated on the substrate, and a second electrode in ohmic contact with the first electrode via the second insulating film,
A Hall element, wherein the first electrode is formed smaller than the second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986110842U JPH0311897Y2 (en) | 1986-07-18 | 1986-07-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986110842U JPH0311897Y2 (en) | 1986-07-18 | 1986-07-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6316471U true JPS6316471U (en) | 1988-02-03 |
| JPH0311897Y2 JPH0311897Y2 (en) | 1991-03-20 |
Family
ID=30990218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986110842U Expired JPH0311897Y2 (en) | 1986-07-18 | 1986-07-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0311897Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999042294A1 (en) * | 1998-02-20 | 1999-08-26 | Sanyo Electric Co., Ltd. | Light emitting diode array and optical print head |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49116961A (en) * | 1973-03-09 | 1974-11-08 |
-
1986
- 1986-07-18 JP JP1986110842U patent/JPH0311897Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49116961A (en) * | 1973-03-09 | 1974-11-08 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999042294A1 (en) * | 1998-02-20 | 1999-08-26 | Sanyo Electric Co., Ltd. | Light emitting diode array and optical print head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0311897Y2 (en) | 1991-03-20 |
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