JPS6430824U - - Google Patents
Info
- Publication number
- JPS6430824U JPS6430824U JP12686587U JP12686587U JPS6430824U JP S6430824 U JPS6430824 U JP S6430824U JP 12686587 U JP12686587 U JP 12686587U JP 12686587 U JP12686587 U JP 12686587U JP S6430824 U JPS6430824 U JP S6430824U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- auxiliary plate
- susceptor
- orientation flat
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図ａ，ｂはそれぞれ本考案の一実施例を示
す平面図及びその―線断面図、第２図は縦型
エピタキシヤル成長装置の概略縦断面図、第３図
ａ，ｂは従来のサセプタ上に円板状ウエハを置い
た場合の部分断面図、第４図ａ，ｂはそれぞれ従
来のサセプタ上にオリエンテーシヨンフラツトを
有するウエハを置いた場合の部分断面図及びその
―線断面図である。
２……サセプタ、３……ウエハ、５……窪み（
ザグリ）、６……オリエンテーシヨンフラツト（
切欠き）、７……補助板。
Figures 1a and 1b are a plan view and a sectional view taken along the line 1-2, respectively, showing an embodiment of the present invention, Figure 2 is a schematic longitudinal sectional view of a vertical epitaxial growth apparatus, and Figures 3a and 3b are a conventional one. A partial cross-sectional view of a disk-shaped wafer placed on a susceptor, Figures 4a and b are a partial cross-sectional view of a wafer with an orientation flat placed on a conventional susceptor, and a cross-sectional view taken along the line It is a diagram. 2... Susceptor, 3... Wafer, 5... Hollow (
counterbore), 6... Orientation flat (
Notch), 7...Auxiliary plate.
Claims (1)
６を有するウエハ３に、エピタキシヤル成長を行
う場合において、ウエハ３をサセプタ２に設けら
れたウエハ３の直径よりもわずかに大きな直径の
窪み５上に配置し、ウエハ３のオリエンテーシヨ
ンフラツト６部とサセプタ２との間に生じた空隙
を埋めるような形状の補助板７を設置せしめてな
るエピタキシヤル成長用補助板。 (2) 補助板７はＳｉＣ、ＳｉＣをコートしたカ
ーボン、石英、Ｓｉ等の材質からなる実用新案登
録請求の範囲第１項記載のエピタキシヤル成長用
補助板。[Claims for Utility Model Registration] (1) When performing epitaxial growth on a wafer 3 having an orientation flat 6 in a part of the disk, the diameter of the wafer 3 provided on the susceptor 2 An auxiliary plate 7 is placed on the recess 5 having a diameter slightly larger than that of the wafer 3, and is shaped to fill the gap created between the orientation flat 6 of the wafer 3 and the susceptor 2. Auxiliary board for growth. (2) The auxiliary plate 7 is an auxiliary plate for epitaxial growth according to claim 1, which is made of a material such as SiC, carbon coated with SiC, quartz, or Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686587U JPS6430824U (en) | 1987-08-19 | 1987-08-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686587U JPS6430824U (en) | 1987-08-19 | 1987-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6430824U true JPS6430824U (en) | 1989-02-27 |
Family
ID=31378773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12686587U Pending JPS6430824U (en) | 1987-08-19 | 1987-08-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6430824U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794416A (en) * | 1993-09-21 | 1995-04-07 | Nec Corp | Chemical vapor deposition device |
| JP2011192731A (en) * | 2010-03-12 | 2011-09-29 | Taiyo Nippon Sanso Corp | Vapor growth device |
-
1987
- 1987-08-19 JP JP12686587U patent/JPS6430824U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794416A (en) * | 1993-09-21 | 1995-04-07 | Nec Corp | Chemical vapor deposition device |
| JP2011192731A (en) * | 2010-03-12 | 2011-09-29 | Taiyo Nippon Sanso Corp | Vapor growth device |
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