JPS6431413A - Measurement of pattern shift during epitaxial growth - Google Patents

Abstract

PURPOSE:To measure the shift of pattern with high accuracy without destroying a substrate, by performing partial epitaxial growth on the semiconductor substrate and by measuring the slippage of the pattern in the case of epitaxial growth using a resist pattern formed on the substrate as a reference. CONSTITUTION:The susceptor 6 of a barrel type vacuum epitaxial device is charged with a semiconductor substrate 1 and its substrate 1 is charged with a dummy substrate 7 on it and when epitaxial growth is performed, a part with an epitaxial layer as well as the part without the epitaxial layer are formed on the substrate. Next, a positive-type resist is coated on the semiconductor substrate where epitaxial growth is performed on the other side surface and mask alignment is carried out with a mask which is used in the case of formation of buried layer at the part where epitaxial growth is not performed and the above part is exposed and also it is developed. And then, patterns of the resist remain on the buried layer and they are formed at a position which has been held prior to epitaxial growth even in the part where epitaxial growth has been performed. Thus the relation of positions between the pattern 5 of the buried layer located at the part where epitaxial growth has been performed and the pattern 3 of the resist are measured.