JPS6431423A - Forming method for cuinse2 thin film - Google Patents

Forming method for cuinse2 thin film

Info

Publication number
JPS6431423A
JPS6431423A JP18735087A JP18735087A JPS6431423A JP S6431423 A JPS6431423 A JP S6431423A JP 18735087 A JP18735087 A JP 18735087A JP 18735087 A JP18735087 A JP 18735087A JP S6431423 A JPS6431423 A JP S6431423A
Authority
JP
Japan
Prior art keywords
thin film
film
cuinse2
material solution
cuinse2 thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18735087A
Other languages
Japanese (ja)
Inventor
Takeshige Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP18735087A priority Critical patent/JPS6431423A/en
Publication of JPS6431423A publication Critical patent/JPS6431423A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To improve the crystallinity of an obtained thin film and to form the film of high quality inexpensively by processing with ultrasonic wave material solution to reduce the particle size of atomized fine particles. CONSTITUTION:Material solution is aqueous solution or alcohol solution of compound containing an element of a CuInSe2 thin film. These solutions 51, 52 and 53 are processed with ultrasonic wave in vessels 41, 42 and 43, respectively to form atomized particles of approx. 1mum. Then, inert gases 91, 92 and 93 are transported to a transport tube 12, and fine particles of the material solution are supplied via transporting gas 11 on a substrate. A CuInSe2 thin film is obtained on the substrate under these conditions. The solutions 51, 52 and 53 are so supplied from auxiliary containers 71, 72 and 73 that the liquid level becomes a predetermined level. Then, the crystallinity of the film is improved and the film is densified to form the CuInSe2 thin film of high quality at low cost.
JP18735087A 1987-07-27 1987-07-27 Forming method for cuinse2 thin film Pending JPS6431423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18735087A JPS6431423A (en) 1987-07-27 1987-07-27 Forming method for cuinse2 thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18735087A JPS6431423A (en) 1987-07-27 1987-07-27 Forming method for cuinse2 thin film

Publications (1)

Publication Number Publication Date
JPS6431423A true JPS6431423A (en) 1989-02-01

Family

ID=16204454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18735087A Pending JPS6431423A (en) 1987-07-27 1987-07-27 Forming method for cuinse2 thin film

Country Status (1)

Country Link
JP (1) JPS6431423A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371619A (en) * 1989-08-11 1991-03-27 Sanyo Electric Co Ltd Method of formation of semiconductor thin film
JPH11330509A (en) * 1998-05-07 1999-11-30 Honda Motor Co Ltd CBD film forming equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0371619A (en) * 1989-08-11 1991-03-27 Sanyo Electric Co Ltd Method of formation of semiconductor thin film
JPH11330509A (en) * 1998-05-07 1999-11-30 Honda Motor Co Ltd CBD film forming equipment

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