JPS6431471A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: JPS6431471A
Authority: JP; Japan
Prior art keywords: region; back gate; channel; gate region; concentration
Prior art date: 1987-07-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP18835987A

Other languages

English (en)

Inventor

Akira Arakawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shimadzu Corp

Original Assignee

Shimadzu Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-27

Filing date

1987-07-27

Publication date

1989-02-01

1987-07-27 Application filed by Shimadzu Corp filed Critical Shimadzu Corp

1987-07-27 Priority to JP18835987A priority Critical patent/JPS6431471A/ja

1989-02-01 Publication of JPS6431471A publication Critical patent/JPS6431471A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
239000002019 doping agent Substances 0.000 abstract 2
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
235000012239 silicon dioxide Nutrition 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
239000000758 substrate Substances 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1

Landscapes

Junction Field-Effect Transistors (AREA)

JP18835987A 1987-07-27 1987-07-27 Semiconductor device Pending JPS6431471A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP18835987A JPS6431471A (en)	1987-07-27	1987-07-27	Semiconductor device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP18835987A JPS6431471A (en)	1987-07-27	1987-07-27	Semiconductor device

Publications (1)

Publication Number	Publication Date
JPS6431471A true JPS6431471A (en)	1989-02-01

Family

ID=16222242

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP18835987A Pending JPS6431471A (en)	1987-07-27	1987-07-27	Semiconductor device

Country Status (1)

Country	Link
JP (1)	JPS6431471A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2004112150A1 (ja) *	2003-06-13	2004-12-23	Sumitomo Electric Industries, Ltd.	電界効果トランジスタ
JP2009010433A (ja) *	2008-10-16	2009-01-15	Sumitomo Electric Ind Ltd	横型接合型電界効果トランジスタおよびその製造方法
CN103367414A (zh) *	2012-04-09	2013-10-23	上海华虹Nec电子有限公司	纵向夹断的面结型场效应晶体管结构及制造方法
US8921903B2 (en)	2006-12-18	2014-12-30	Sumitomo Electric Industries, Ltd.	Lateral junction field-effect transistor

1987
- 1987-07-27 JP JP18835987A patent/JPS6431471A/ja active Pending

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2004112150A1 (ja) *	2003-06-13	2004-12-23	Sumitomo Electric Industries, Ltd.	電界効果トランジスタ
EP1635400A4 (en) *	2003-06-13	2007-09-26	Sumitomo Electric Industries	FIELD EFFECT TRANSISTOR
US8921903B2 (en)	2006-12-18	2014-12-30	Sumitomo Electric Industries, Ltd.	Lateral junction field-effect transistor
JP2009010433A (ja) *	2008-10-16	2009-01-15	Sumitomo Electric Ind Ltd	横型接合型電界効果トランジスタおよびその製造方法
CN103367414A (zh) *	2012-04-09	2013-10-23	上海华虹Nec电子有限公司	纵向夹断的面结型场效应晶体管结构及制造方法

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