JPS533075A - Production of mos structure field effect semiconductor device - Google Patents

Production of mos structure field effect semiconductor device

Info

Publication number
JPS533075A
JPS533075A JP7745976A JP7745976A JPS533075A JP S533075 A JPS533075 A JP S533075A JP 7745976 A JP7745976 A JP 7745976A JP 7745976 A JP7745976 A JP 7745976A JP S533075 A JPS533075 A JP S533075A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
field effect
mos structure
structure field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7745976A
Other languages
Japanese (ja)
Other versions
JPS605070B2 (en
Inventor
Shinobu Fukunaga
Takeshi Yamano
Masahiko Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7745976A priority Critical patent/JPS605070B2/en
Publication of JPS533075A publication Critical patent/JPS533075A/en
Publication of JPS605070B2 publication Critical patent/JPS605070B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To obtain a SOI device of low cost a =nd stable operation by opening holes in the SiC layer on a Si substrate, laminating a Si epitaxial layer thereon and forming channel regions in the portions in contact with the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP7745976A 1976-06-29 1976-06-29 Manufacturing method of MOS structure field effect semiconductor device Expired JPS605070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7745976A JPS605070B2 (en) 1976-06-29 1976-06-29 Manufacturing method of MOS structure field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7745976A JPS605070B2 (en) 1976-06-29 1976-06-29 Manufacturing method of MOS structure field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS533075A true JPS533075A (en) 1978-01-12
JPS605070B2 JPS605070B2 (en) 1985-02-08

Family

ID=13634584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7745976A Expired JPS605070B2 (en) 1976-06-29 1976-06-29 Manufacturing method of MOS structure field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS605070B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216217A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243666A (en) * 1985-04-19 1986-10-29 アンリツ株式会社 Electric connection element
JPS6350454U (en) * 1986-09-22 1988-04-05

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216217A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device
US4983538A (en) * 1987-11-20 1991-01-08 Fujitsu Limited Method for fabricating a silicon carbide substrate
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same

Also Published As

Publication number Publication date
JPS605070B2 (en) 1985-02-08

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