JPS64342B2 - - Google Patents

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Publication number
JPS64342B2
JPS64342B2 JP56055315A JP5531581A JPS64342B2 JP S64342 B2 JPS64342 B2 JP S64342B2 JP 56055315 A JP56055315 A JP 56055315A JP 5531581 A JP5531581 A JP 5531581A JP S64342 B2 JPS64342 B2 JP S64342B2
Authority
JP
Japan
Prior art keywords
firing
cooling
sample
breakdown voltage
ceramic composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56055315A
Other languages
Japanese (ja)
Other versions
JPS57170871A (en
Inventor
Tomotoshi Nakai
Masatomo Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56055315A priority Critical patent/JPS57170871A/en
Publication of JPS57170871A publication Critical patent/JPS57170871A/en
Publication of JPS64342B2 publication Critical patent/JPS64342B2/ja
Granted legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は高誘電率を有し、しかも低温で焼成が
可能な磁器組成物及びこれを用いた積層型コンデ
ンサの製造方法に関するものである。 従来、高誘電率を有する誘電体としてはチタン
酸バリウムを主成分とする材料が広く知られてい
る。しかし、これらの誘電体の最適焼成温度は
1300℃〜1400℃の高温であり、これを積層型コン
デンサ等に用いる場合は白金やパラジウム等を主
成分とする高価な貴金属を内部電極として使用し
なければならない欠点を有していた。 Pb(Fe1/2Nb1/2)O3、Pb(Fe2/3W1/3)O3及びPb
(Zn1/3Nb2/3)O3を主成分とする三成分系磁器組
成物はこの欠点を解決したものであり、950℃以
下で緻密に焼結できるためニツケルや銀を主成分
とする安価な内部電極が使用できる(特開昭55−
57204)。しかも高誘電率を有し誘電損失が小さく
比抵抗が大きい優れた材料である。 ところで積層コンデンサの小型化、低価格化を
実現するには、グリーンシートの膜厚をできるだ
け薄くする必要がある。このためには絶縁破壊電
圧ができるだけ大きいことが望まれる。しかし従
来はその製造工程において焼成工程中の最高焼成
温度で焼成した後の冷却は毎時100℃以上の速度
で冷却するか、あるいは電気炉の自然冷却(冷却
速度は一定でなく、最高焼成温度から300℃低下
するまでの平均冷却速度は約150℃〜200℃/時)
にまかせてきた。このため前述の三成分系の磁器
組成物といえども絶縁破壊電圧は低いものであつ
た。例えば後述する実施例に従つて準備した試料
を従来方法で焼成すると絶縁破壊電圧は約500〜
700V程度のものしか得られない。 本発明は磁器組成物の絶縁破壊電圧を向上さ
せ、これを用いた積層コンデンサの信頼性の向上
に大きな効果のある磁器組成物の製造方法を提供
するものである。 本発明の製造方法は、焼成工程中にPbOを主成
分とする液相が発生する試料を焼成工程中の最高
焼成温度で焼成した後、毎時60℃以下の冷却速度
で冷却する工程を有することを特徴としている。
なおこの冷却速度での冷却は650℃以下の温度ま
で行なうことが望ましい。 Pb(Fe1/2Nb1/2)O3、Pb(Fe2/3W1/3)O3及びPb
(Zn1/3Nb2/3)O3からなる三成分系やPb(Fe2/3
W1/3)O3とPbTiO3からなる二成分系あるいはPb
(Mg1/2W1/2)O3とPbTiO3からなる二成分系等の
磁器組成物をX線マイクロアナライザ等で観察す
ると結晶粒界層にPbOを主成分とする物質が存在
することが確認され、これは焼成最高温度で液相
状態であることがその形状より判明した。 したがつて、本発明はこの残存液相量を、焼成
後の冷却速度を緩やかにすることにより減少さ
せ、磁器組成物の絶縁破壊電圧を大きく増大させ
たものである。 以下実施例にしたがつて説明する。 出発原料としては、PbO、Fe2O3、Nb2O5
ZnO、WO3、MgO、TiO2を用意し、表に示した
組成比にしたがつて秤量した。これをボールミル
で湿式混合し、700℃〜800℃で仮焼を行なつた。
この仮焼粉末を再度ボールミルで湿式混合し、こ
れを炉過、乾燥、粉砕の後有機溶媒、有機バイン
ダーを加え、ミキサーで混合し、ドクターブレー
ド法で40±1μのシートに成型した。これを適当
な大きさに切断し、これに銀、パラジウムを含む
内部電極を印刷した。内部電極は有効電極面積が
約6mm2の印刷パターンを用い、有効電極層が15層
となるようにシートを積層した。焼成は表に示す
10種類の試料につき、同表にそれぞれ示す最高焼
成温度で焼成した後、650℃まで毎時100℃から毎
時10℃の範囲の冷却速度で冷却した。 絶縁破壊電圧の測定は室温で試料をシリコン油
中に置き、印加電圧を50Vづつ増加させてゆき、
各電圧は5秒間、保持した。値は10個の試料の平
均値をとつた。これらの値を第1図〜第3図に示
した。図中の各曲線に付けた番号は表に示した試
料番号である。
The present invention relates to a ceramic composition that has a high dielectric constant and can be fired at low temperatures, and a method for manufacturing a multilayer capacitor using the same. Conventionally, materials containing barium titanate as a main component are widely known as dielectric materials having a high dielectric constant. However, the optimal firing temperature for these dielectrics is
It has a high temperature of 1,300°C to 1,400°C, and when used in multilayer capacitors, etc., it has the disadvantage that expensive noble metals mainly composed of platinum, palladium, etc. must be used as internal electrodes. Pb (Fe 1/2 Nb 1/2 ) O 3 , Pb (Fe 2/3 W 1/3 ) O 3 and Pb
The three-component ceramic composition containing (Zn 1/3 Nb 2/3 ) O 3 as the main component solves this drawback, and because it can be sintered densely at temperatures below 950°C, it can be used with nickel or silver as the main component. It is possible to use inexpensive internal electrodes that
57204). Moreover, it is an excellent material with a high dielectric constant, low dielectric loss, and high specific resistance. By the way, in order to make multilayer capacitors smaller and cheaper, it is necessary to make the thickness of the green sheet as thin as possible. For this purpose, it is desirable that the dielectric breakdown voltage be as high as possible. However, in the past, in the manufacturing process, after firing at the highest firing temperature during the firing process, cooling was done at a rate of 100°C or more per hour, or by natural cooling in an electric furnace (the cooling rate was not constant, and the temperature was lower than the highest firing temperature). The average cooling rate until the temperature drops by 300℃ is approximately 150℃ to 200℃/hour)
I've been leaving it to myself. Therefore, even with the above-mentioned three-component ceramic composition, the dielectric breakdown voltage was low. For example, when a sample prepared according to the example described later is fired using the conventional method, the dielectric breakdown voltage is approximately 500~
You can only get something around 700V. The present invention provides a method for producing a ceramic composition that is highly effective in improving the dielectric breakdown voltage of the ceramic composition and improving the reliability of multilayer capacitors using the same. The manufacturing method of the present invention includes the step of firing a sample in which a liquid phase mainly composed of PbO is generated during the firing process at the highest firing temperature during the firing process, and then cooling the sample at a cooling rate of 60°C or less per hour. It is characterized by
Note that cooling at this cooling rate is desirably performed to a temperature of 650°C or less. Pb (Fe 1/2 Nb 1/2 ) O 3 , Pb (Fe 2/3 W 1/3 ) O 3 and Pb
(Zn 1/3 Nb 2/3 ) O 3 ternary system and Pb (Fe 2/3
W 1/3 ) Binary system consisting of O 3 and PbTiO 3 or Pb
(Mg 1/2 W 1/2 ) When a binary ceramic composition consisting of O 3 and PbTiO 3 is observed using an X-ray microanalyzer, it is found that a substance mainly composed of PbO is present in the grain boundary layer. was confirmed, and its shape revealed that it was in a liquid phase at the maximum firing temperature. Therefore, the present invention reduces the amount of the remaining liquid phase by slowing down the cooling rate after firing, thereby greatly increasing the dielectric breakdown voltage of the ceramic composition. Examples will be explained below. Starting materials include PbO, Fe 2 O 3 , Nb 2 O 5 ,
ZnO, WO 3 , MgO, and TiO 2 were prepared and weighed according to the composition ratios shown in the table. This was wet mixed in a ball mill and calcined at 700°C to 800°C.
This calcined powder was wet-mixed again in a ball mill, filtered, dried, and pulverized, then an organic solvent and an organic binder were added, mixed in a mixer, and formed into a sheet of 40±1 μm using a doctor blade method. This was cut into an appropriate size, and internal electrodes containing silver and palladium were printed on it. For the internal electrodes, a printed pattern with an effective electrode area of about 6 mm 2 was used, and sheets were stacked so that the number of effective electrode layers was 15. Firing is shown in the table.
The 10 types of samples were fired at the maximum firing temperatures shown in the same table, and then cooled to 650°C at a cooling rate ranging from 100°C per hour to 10°C per hour. To measure the dielectric breakdown voltage, place the sample in silicone oil at room temperature and increase the applied voltage in 50V increments.
Each voltage was held for 5 seconds. The value was the average value of 10 samples. These values are shown in FIGS. 1 to 3. The numbers assigned to each curve in the figure are the sample numbers shown in the table.

【表】 図からも明らかなようにPb(Fe1/2Nb1/2)O3
Pb(Fe2/3W1/3)O3及びPb(Zn1/3Nb2/3)O3からな
る三成分系あるいはPb(Fe2/3W1/3)O3とPbTiO3
からなる二成分系、あるいはPb(Mg1/2W1/2)O3
とPbTiO3からなる二成分系等のように焼成工程
中にPbOを主成分とする液相が発生する材料に対
して本発明の製造方法を適用することにより、絶
縁破壊電圧が従来法に比べ1.5〜2.5倍に増大し、
信頼性を高めている。
[Table] As is clear from the figure, Pb(Fe 1/2 Nb 1/2 ) O 3 ,
Ternary system consisting of Pb (Fe 2/3 W 1/3 ) O 3 and Pb (Zn 1/3 Nb 2/3 ) O 3 or Pb (Fe 2/3 W 1/3 ) O 3 and PbTiO 3
A two-component system consisting of Pb (Mg 1/2 W 1/2 ) O 3
By applying the manufacturing method of the present invention to materials in which a liquid phase containing PbO as the main component is generated during the firing process, such as a two - component system consisting of Increased by 1.5 to 2.5 times,
Improves reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図、第3図は絶縁破壊電圧と冷却
速度との関係を示したものである。それぞれの図
中のカツコ内の番号は表に示した組成番号であ
る。
FIG. 1, FIG. 2, and FIG. 3 show the relationship between dielectric breakdown voltage and cooling rate. The numbers in brackets in each figure are the composition numbers shown in the table.

Claims (1)

【特許請求の範囲】[Claims] 1 焼成工程中にPbOを主成分とする液相が発生
する試料を、その焼成工程中の最高焼成温度で焼
成後、毎時60℃以下の速度で冷却する工程を有す
ることを特徴とする誘電体磁器組成物の製造方
法。
1. A dielectric material characterized by having a step of firing a sample in which a liquid phase mainly composed of PbO is generated during the firing process at the highest firing temperature during the firing process, and then cooling it at a rate of 60°C or less per hour. A method for producing a porcelain composition.
JP56055315A 1981-04-13 1981-04-13 Manufacture of ceramic composition Granted JPS57170871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56055315A JPS57170871A (en) 1981-04-13 1981-04-13 Manufacture of ceramic composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56055315A JPS57170871A (en) 1981-04-13 1981-04-13 Manufacture of ceramic composition

Publications (2)

Publication Number Publication Date
JPS57170871A JPS57170871A (en) 1982-10-21
JPS64342B2 true JPS64342B2 (en) 1989-01-06

Family

ID=12995116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56055315A Granted JPS57170871A (en) 1981-04-13 1981-04-13 Manufacture of ceramic composition

Country Status (1)

Country Link
JP (1) JPS57170871A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226013A (en) * 1986-09-24 1988-09-20 株式会社東芝 Thick film capacitor

Also Published As

Publication number Publication date
JPS57170871A (en) 1982-10-21

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