JPS6436768A - Production of amorphous carbon film bonded to hydrogen - Google Patents

Abstract

PURPOSE:To control doping amount of impurity safely and easily by introducing carrier gas brought into contact with an organic metallic compd. as impurity into a carbon film formation vessel and regulating the temp. of the above- mentioned compd. or the flow rate of the carrier gas. CONSTITUTION:A high-frequency electric field is generated between a graphite target 2 and a counter electrode 3 in an evacuated high vacuum-vessel 1 and gaseous hydrogen is introduced through a gas flow path 7. Thereby an amorphous carbon film bonded to hydrogen is formed on the substrates 51, 52 heated at prescribed temp. and placed on substrate holders 4 by sputtering the target 2. In the production of the carbon film, carrier gas such as hydrogen is passed through a vessel 8 enclosed with organic metallic compd 81 as impurity being doped such as Al(CH3)3 and thereafter introduced into the high-vacuum vessel 1 at the time of forming the carbon film through a gas flow path 6. In the case, the temp. of the organic metallic compd. 81 and/or the flow rate of carrier gas is regulated. Thereby good semiconductor characteristics are obtained by controlling the doping amount of impurity.