JPS6436768A - Production of amorphous carbon film bonded to hydrogen - Google Patents
Production of amorphous carbon film bonded to hydrogenInfo
- Publication number
- JPS6436768A JPS6436768A JP19189087A JP19189087A JPS6436768A JP S6436768 A JPS6436768 A JP S6436768A JP 19189087 A JP19189087 A JP 19189087A JP 19189087 A JP19189087 A JP 19189087A JP S6436768 A JPS6436768 A JP S6436768A
- Authority
- JP
- Japan
- Prior art keywords
- carbon film
- impurity
- hydrogen
- carrier gas
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052739 hydrogen Inorganic materials 0.000 title abstract 4
- 239000001257 hydrogen Substances 0.000 title abstract 4
- 229910003481 amorphous carbon Inorganic materials 0.000 title abstract 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 4
- 239000012159 carrier gas Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To control doping amount of impurity safely and easily by introducing carrier gas brought into contact with an organic metallic compd. as impurity into a carbon film formation vessel and regulating the temp. of the above- mentioned compd. or the flow rate of the carrier gas. CONSTITUTION:A high-frequency electric field is generated between a graphite target 2 and a counter electrode 3 in an evacuated high vacuum-vessel 1 and gaseous hydrogen is introduced through a gas flow path 7. Thereby an amorphous carbon film bonded to hydrogen is formed on the substrates 51, 52 heated at prescribed temp. and placed on substrate holders 4 by sputtering the target 2. In the production of the carbon film, carrier gas such as hydrogen is passed through a vessel 8 enclosed with organic metallic compd 81 as impurity being doped such as Al(CH3)3 and thereafter introduced into the high-vacuum vessel 1 at the time of forming the carbon film through a gas flow path 6. In the case, the temp. of the organic metallic compd. 81 and/or the flow rate of carrier gas is regulated. Thereby good semiconductor characteristics are obtained by controlling the doping amount of impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19189087A JPS6436768A (en) | 1987-07-31 | 1987-07-31 | Production of amorphous carbon film bonded to hydrogen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19189087A JPS6436768A (en) | 1987-07-31 | 1987-07-31 | Production of amorphous carbon film bonded to hydrogen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6436768A true JPS6436768A (en) | 1989-02-07 |
Family
ID=16282153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19189087A Pending JPS6436768A (en) | 1987-07-31 | 1987-07-31 | Production of amorphous carbon film bonded to hydrogen |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6436768A (en) |
-
1987
- 1987-07-31 JP JP19189087A patent/JPS6436768A/en active Pending
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