JPS6437008A - Manufacture of amorphous semiconductor film - Google Patents

Manufacture of amorphous semiconductor film

Info

Publication number
JPS6437008A
JPS6437008A JP62193157A JP19315787A JPS6437008A JP S6437008 A JPS6437008 A JP S6437008A JP 62193157 A JP62193157 A JP 62193157A JP 19315787 A JP19315787 A JP 19315787A JP S6437008 A JPS6437008 A JP S6437008A
Authority
JP
Japan
Prior art keywords
gas
semiconductor film
amorphous semiconductor
germane
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62193157A
Other languages
Japanese (ja)
Inventor
Tetsuhiro Okuno
Yoshihiko Takeda
Hitoshi Sannomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62193157A priority Critical patent/JPS6437008A/en
Publication of JPS6437008A publication Critical patent/JPS6437008A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To contrive improvement in photoconductivity by a method wherein a specific quantity of germane gas is added to the mixture of silane gas and methane gas. CONSTITUTION:A substrate is set in a chamber of a multichamber isolation type CVD device, and when silane gas, germane gas and methane gas are introduced as the material gas, the flow rate of germane gas is controlled in such a manner that it becomes 2.5% or less of the total flow quantity of silane gas and methane gas, the raw gas is decomposed by generating electric discharge, and an amorphous semiconductor film is formed on the substrate. As a result, photoconductivity can be improved.
JP62193157A 1987-07-31 1987-07-31 Manufacture of amorphous semiconductor film Pending JPS6437008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62193157A JPS6437008A (en) 1987-07-31 1987-07-31 Manufacture of amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62193157A JPS6437008A (en) 1987-07-31 1987-07-31 Manufacture of amorphous semiconductor film

Publications (1)

Publication Number Publication Date
JPS6437008A true JPS6437008A (en) 1989-02-07

Family

ID=16303231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62193157A Pending JPS6437008A (en) 1987-07-31 1987-07-31 Manufacture of amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS6437008A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224127A (en) * 1993-01-27 1994-08-12 Nec Corp Method and apparatus for growing silicon film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06224127A (en) * 1993-01-27 1994-08-12 Nec Corp Method and apparatus for growing silicon film

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