JPS6437012A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS6437012A
JPS6437012A JP19283387A JP19283387A JPS6437012A JP S6437012 A JPS6437012 A JP S6437012A JP 19283387 A JP19283387 A JP 19283387A JP 19283387 A JP19283387 A JP 19283387A JP S6437012 A JPS6437012 A JP S6437012A
Authority
JP
Japan
Prior art keywords
coated
film
melting point
high melting
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19283387A
Other languages
Japanese (ja)
Inventor
Yukinobu Murao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP19283387A priority Critical patent/JPS6437012A/en
Publication of JPS6437012A publication Critical patent/JPS6437012A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the local breakdown caused by the electrification of an interlayer insulating film by a method wherein, when an electrode wiring is formed, a high melting point silicide film is coated on the exposed surface after a contact hole has been provided on the interlayer insulated film, and the prescribed impurities are implanted into the high melting point metal silicide film coated on the contact hole. CONSTITUTION:When an electrode wiring is formed, the surface of the conductive part 125 of the lower layer is exposed by providing a contact hole 140 on an interlayer insulating film 130, and after a high melting point metal silicide film 150 has been coated, ions are implanted, and the prescribed impurities are introduced into the conductive part 125. Then, an insulating film 160 has been removed, a metal film 170 is coated. As ions 155 are implanted after the high melting point metal silicide film 150 has been coated as above-mentioned, the interlayer insulating film 130 is electrified, and a local breakdown can be eliminated.
JP19283387A 1987-07-31 1987-07-31 Manufacture of semiconductor integrated circuit Pending JPS6437012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19283387A JPS6437012A (en) 1987-07-31 1987-07-31 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19283387A JPS6437012A (en) 1987-07-31 1987-07-31 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6437012A true JPS6437012A (en) 1989-02-07

Family

ID=16297737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19283387A Pending JPS6437012A (en) 1987-07-31 1987-07-31 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6437012A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175626A (en) * 1989-12-04 1991-07-30 Nmb Semiconductor:Kk Ic and its manufacture

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166770A (en) * 1982-03-26 1983-10-01 Fujitsu Ltd Semiconductor device
JPS58204531A (en) * 1982-05-25 1983-11-29 Toshiba Corp Manufacture of semiconductor device
JPS60182133A (en) * 1984-02-29 1985-09-17 Fujitsu Ltd Manufacture of semiconductor device
JPS60198814A (en) * 1984-03-23 1985-10-08 Nec Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166770A (en) * 1982-03-26 1983-10-01 Fujitsu Ltd Semiconductor device
JPS58204531A (en) * 1982-05-25 1983-11-29 Toshiba Corp Manufacture of semiconductor device
JPS60182133A (en) * 1984-02-29 1985-09-17 Fujitsu Ltd Manufacture of semiconductor device
JPS60198814A (en) * 1984-03-23 1985-10-08 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03175626A (en) * 1989-12-04 1991-07-30 Nmb Semiconductor:Kk Ic and its manufacture

Similar Documents

Publication Publication Date Title
EP0128385A3 (en) Method of producing a semiconductor device having electrodes and wirings
DE3663871D1 (en) Integrated semiconductor circuit having an aluminium or aluminium alloy contact conductor path and an intermediate tantalum silicide layer as a diffusion barrier
EP0394722A3 (en) Multilevel metallization for vlsi and method for forming the same
TW345743B (en) Method for forming side contact of semiconductor device
WO1996016435A3 (en) Semiconductor device provided with a microcomponent having a fixed and a movable electrode
KR970007819B1 (en) Contact forming method of semiconductor device
EP0134692A3 (en) Multilayer semiconductor devices with embedded conductor structure
JPS5536915A (en) Electronic circuit and its manufacturing
JPS6448423A (en) Dividing method of semiconductor chip
SU1358777A1 (en) Double-level thin-film switchboard manufacturing process
JPS6457664A (en) Contact connection structure
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS57166048A (en) Semiconductor integrated circuit
JPS56130920A (en) Forming method of electrode for semiconductor device
JPS5775444A (en) Multilayer wiring method
JPS57134965A (en) Semiconductor device
JPS6437037A (en) Manufacture of semiconductor device
JPS64747A (en) Manufacture of semiconductor device
JPS5772350A (en) Fabrication of semiconductor device
JPS57181143A (en) Manufacture of semiconductor device
JPS57121254A (en) Manufacture of semiconductor device
KR860001041B1 (en) Metal wiring formation method of semiconductor device
JPS5385158A (en) Electrode forming method of semiconductor device
JPS6419749A (en) Formation of electrode of semiconductor device
JPS56158466A (en) Semiconductor device