JPS6437490A - Silicon single crystal pulling-up apparatus - Google Patents

Silicon single crystal pulling-up apparatus

Info

Publication number
JPS6437490A
JPS6437490A JP19412987A JP19412987A JPS6437490A JP S6437490 A JPS6437490 A JP S6437490A JP 19412987 A JP19412987 A JP 19412987A JP 19412987 A JP19412987 A JP 19412987A JP S6437490 A JPS6437490 A JP S6437490A
Authority
JP
Japan
Prior art keywords
inert gas
pulling
single crystal
silicon single
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19412987A
Other languages
Japanese (ja)
Other versions
JP2582582B2 (en
Inventor
Osamu Suzuki
Masato Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP62194129A priority Critical patent/JP2582582B2/en
Publication of JPS6437490A publication Critical patent/JPS6437490A/en
Application granted granted Critical
Publication of JP2582582B2 publication Critical patent/JP2582582B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To sustain growth of nucleus having crystal defect, by feeding a high-temperature inert gas into a heat treating furnace and feeding a low- temperature inert gas into a pulling-up passage of silicon single crystal. CONSTITUTION:A silicon material 53 housed in a quartz crucible 54 is melted by reducing pressure in a heating furnace 20 through a discharge tube 23 and applying voltage to a heater 30 to send electricity while feeding argon gas from a inert gas supply device 60 through a inert gas supply tube 63. A silicon single crystal 56 is grown by properly selecting the rotating rate of the rotating shaft 51 while continuing supply of argon gas through the inert gas supply tube 63 after melting the silicon material 53 and jetting the argon gas from the inert gas jetting component 67 through the inert gas supply tube 65 and pulling up a seed crystal with a wire component 55 for pulling-up. In the above- mentioned apparatus 10, growth of nucleus having crystal defect is prevented by pulling up the silicon single crystal 56 and then cooling the crystal, since the inert gas (e.g. argon gas) fed to the pulling-up passage of the silicon single crystal 56 is lowered to the desired temperature.
JP62194129A 1987-08-03 1987-08-03 Silicon single crystal pulling equipment Expired - Fee Related JP2582582B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62194129A JP2582582B2 (en) 1987-08-03 1987-08-03 Silicon single crystal pulling equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62194129A JP2582582B2 (en) 1987-08-03 1987-08-03 Silicon single crystal pulling equipment

Publications (2)

Publication Number Publication Date
JPS6437490A true JPS6437490A (en) 1989-02-08
JP2582582B2 JP2582582B2 (en) 1997-02-19

Family

ID=16319389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62194129A Expired - Fee Related JP2582582B2 (en) 1987-08-03 1987-08-03 Silicon single crystal pulling equipment

Country Status (1)

Country Link
JP (1) JP2582582B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970059321A (en) * 1996-01-22 1997-08-12 헨넬리 헬렌 에프. Rapid Cooling Method of CZ Silicon Crystal Growth System

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915366A (en) * 1972-05-17 1974-02-09
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
JPS538374A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Growing method for single crystal of semiconductor
JPS6077115A (en) * 1983-09-30 1985-05-01 Sumitomo Metal Ind Ltd Method and apparatus for producing high-purity silicon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915366A (en) * 1972-05-17 1974-02-09
JPS5261180A (en) * 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
JPS538374A (en) * 1976-07-12 1978-01-25 Hitachi Ltd Growing method for single crystal of semiconductor
JPS6077115A (en) * 1983-09-30 1985-05-01 Sumitomo Metal Ind Ltd Method and apparatus for producing high-purity silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970059321A (en) * 1996-01-22 1997-08-12 헨넬리 헬렌 에프. Rapid Cooling Method of CZ Silicon Crystal Growth System

Also Published As

Publication number Publication date
JP2582582B2 (en) 1997-02-19

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees