JPS6437491A - Silicon single crystal pulling-up apparatus - Google Patents
Silicon single crystal pulling-up apparatusInfo
- Publication number
- JPS6437491A JPS6437491A JP19413087A JP19413087A JPS6437491A JP S6437491 A JPS6437491 A JP S6437491A JP 19413087 A JP19413087 A JP 19413087A JP 19413087 A JP19413087 A JP 19413087A JP S6437491 A JPS6437491 A JP S6437491A
- Authority
- JP
- Japan
- Prior art keywords
- pulling
- single crystal
- heater
- melting
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 6
- 229910052786 argon Inorganic materials 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 239000011261 inert gas Substances 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 3
- 238000002844 melting Methods 0.000 abstract 3
- 239000002210 silicon-based material Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To contrive reduction of consumed power of a heater and shortening of the time required for melting, by providing the heater at a crucible device in a heat treating furnace, feeding an inert gas for raising temperature into the furnace, melting a silicon material and pulling up a single crystal. CONSTITUTION:A silicon material 53 housed in a quartz crucible 54 is melted by reducing pressure in a heating furnace 20 through a discharge tube 23 and applying voltage to a heater 30 to send electricity while feeding argon gas from a inert gas supply device 60 through a pulling-up chamber 21 and pulling-up hole 22. A silicon single crystal 56 is grown by properly selecting the rotating rate of the rotating shaft 51 while continuing supply of argon gas after melting the silicon material 53 and pulling up a seed crystal with a wire component 55 for pulling-up. In the above-mentioned silicon single crystal pulling-up apparatus 10, consumed power in the heating heater 30 can be reduced, since an inert gas (e.g. argon gas) fed to the interior of heat treating furnace 20 from a pulling-up chamber 21 is raised to the desired temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194130A JP2608728B2 (en) | 1987-08-03 | 1987-08-03 | Silicon single crystal pulling equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194130A JP2608728B2 (en) | 1987-08-03 | 1987-08-03 | Silicon single crystal pulling equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6437491A true JPS6437491A (en) | 1989-02-08 |
| JP2608728B2 JP2608728B2 (en) | 1997-05-14 |
Family
ID=16319406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62194130A Expired - Lifetime JP2608728B2 (en) | 1987-08-03 | 1987-08-03 | Silicon single crystal pulling equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2608728B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05125630A (en) * | 1991-03-30 | 1993-05-21 | Fag Kugelfischer Georg Schaefer & Kgaa | Frictional temporary twisting device driven by motor |
| CN103343387A (en) * | 2013-07-17 | 2013-10-09 | 英利能源（中国）有限公司 | Polycrystalline silicon ingotting furnace and ingotting method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915366A (en) * | 1972-05-17 | 1974-02-09 | ||
| JPS5832100A (en) * | 1981-08-17 | 1983-02-24 | Toshiba Ceramics Co Ltd | Device for pulling up silicon single crystal |
| JPS598694A (en) * | 1982-07-08 | 1984-01-17 | Toshiba Corp | Apparatus for crystal growth |
| JPS6077115A (en) * | 1983-09-30 | 1985-05-01 | Sumitomo Metal Ind Ltd | Method and apparatus for producing high-purity silicon |
-
1987
- 1987-08-03 JP JP62194130A patent/JP2608728B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915366A (en) * | 1972-05-17 | 1974-02-09 | ||
| JPS5832100A (en) * | 1981-08-17 | 1983-02-24 | Toshiba Ceramics Co Ltd | Device for pulling up silicon single crystal |
| JPS598694A (en) * | 1982-07-08 | 1984-01-17 | Toshiba Corp | Apparatus for crystal growth |
| JPS6077115A (en) * | 1983-09-30 | 1985-05-01 | Sumitomo Metal Ind Ltd | Method and apparatus for producing high-purity silicon |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05125630A (en) * | 1991-03-30 | 1993-05-21 | Fag Kugelfischer Georg Schaefer & Kgaa | Frictional temporary twisting device driven by motor |
| CN103343387A (en) * | 2013-07-17 | 2013-10-09 | 英利能源（中国）有限公司 | Polycrystalline silicon ingotting furnace and ingotting method thereof |
| CN103343387B (en) * | 2013-07-17 | 2016-03-30 | 英利能源（中国）有限公司 | A kind of polycrystalline silicon ingot or purifying furnace and casting ingot method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2608728B2 (en) | 1997-05-14 |
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