JPS6439035A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6439035A
JPS6439035A JP62195583A JP19558387A JPS6439035A JP S6439035 A JPS6439035 A JP S6439035A JP 62195583 A JP62195583 A JP 62195583A JP 19558387 A JP19558387 A JP 19558387A JP S6439035 A JPS6439035 A JP S6439035A
Authority
JP
Japan
Prior art keywords
film
substrate
mesh
metal
aluminum film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62195583A
Other languages
Japanese (ja)
Inventor
Susumu Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62195583A priority Critical patent/JPS6439035A/en
Publication of JPS6439035A publication Critical patent/JPS6439035A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent shocks applied to a substrate by placing both the upper and lower layer metal films and a metal film with improved adhesion between the lowest metal film of electrode of a bonding pad and a semiconductor substrate or between metal film layers forming the pad. CONSTITUTION:It consists of a gallium arsenide substrate 1, a substrate insulating film 2 which is allowed to grow on this substrate 1, an aluminum film 3 which is formed on the opening in a mesh, a titanium film 4 which is formed in lamination on this mesh-like aluminum film 3 in sequence, a platinum film 5, and a gold electrode 6. Thus, since irregular faces are also formed on a titanium film 4 and a platinum film 5 which are formed on a lower aluminum film layer 3 if the lower aluminum film layer 3 is formed in a mesh, they are easily deformed, it will allow shocks applied to the substrate 1 to be absorbed and restrained.
JP62195583A 1987-08-04 1987-08-04 Semiconductor device Pending JPS6439035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62195583A JPS6439035A (en) 1987-08-04 1987-08-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62195583A JPS6439035A (en) 1987-08-04 1987-08-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439035A true JPS6439035A (en) 1989-02-09

Family

ID=16343552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62195583A Pending JPS6439035A (en) 1987-08-04 1987-08-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439035A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058391U (en) * 1991-07-08 1993-02-05 高砂工業株式会社 Rotary kiln
US6515364B2 (en) 2000-04-14 2003-02-04 Nec Corporation Semiconductor device
JP2004103767A (en) * 2002-09-09 2004-04-02 Murata Mfg Co Ltd Magnetic sensor
JP2005123587A (en) * 2003-09-26 2005-05-12 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2007073702A (en) * 2005-09-06 2007-03-22 Canon Inc Semiconductor element
JP2008235944A (en) * 2003-09-26 2008-10-02 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2012028795A (en) * 2003-09-30 2012-02-09 Agere Systems Inc Method and system for reinforcing bond pad
WO2014147677A1 (en) * 2013-03-22 2014-09-25 パナソニック株式会社 Semiconductor device
US12543576B2 (en) 2021-07-16 2026-02-03 Denso Corporation Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH058391U (en) * 1991-07-08 1993-02-05 高砂工業株式会社 Rotary kiln
US6515364B2 (en) 2000-04-14 2003-02-04 Nec Corporation Semiconductor device
JP2004103767A (en) * 2002-09-09 2004-04-02 Murata Mfg Co Ltd Magnetic sensor
JP2005123587A (en) * 2003-09-26 2005-05-12 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2008235944A (en) * 2003-09-26 2008-10-02 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method thereof
JP2012028795A (en) * 2003-09-30 2012-02-09 Agere Systems Inc Method and system for reinforcing bond pad
JP2007073702A (en) * 2005-09-06 2007-03-22 Canon Inc Semiconductor element
WO2014147677A1 (en) * 2013-03-22 2014-09-25 パナソニック株式会社 Semiconductor device
US9698096B2 (en) 2013-03-22 2017-07-04 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device
US12543576B2 (en) 2021-07-16 2026-02-03 Denso Corporation Semiconductor device

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