JPS6439363A - Method and device for forming thin film of conductive and transparent metal oxide by reactive sputtering - Google Patents
Method and device for forming thin film of conductive and transparent metal oxide by reactive sputteringInfo
- Publication number
- JPS6439363A JPS6439363A JP19480587A JP19480587A JPS6439363A JP S6439363 A JPS6439363 A JP S6439363A JP 19480587 A JP19480587 A JP 19480587A JP 19480587 A JP19480587 A JP 19480587A JP S6439363 A JPS6439363 A JP S6439363A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- film
- metal oxide
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000005546 reactive sputtering Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 8
- 239000010408 film Substances 0.000 abstract 4
- 239000011261 inert gas Substances 0.000 abstract 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To continuously form an optimum thin film exhibiting high electric conductivity and transparency by measuring the resistance value of the thin film formed on a substrate in plural regions in the cross direction, and independently controlling the gas supply amt. from plural gas inlet pipes based on the respective measured values. CONSTITUTION:When a film rewound from a rewinding roll 2 passes a main roll 3 in a vacuum vessel 1, an electric discharge is generated in the atmosphere of the gaseous mixture of an inert gas and an active gas, and the metallic substance of a target 6 is allowed to react with the active gas to form a thin film on the film. The sheet resistivity of the thin metal oxide film thus formed on the film is sent to an arithmetic unit 9 by a rotary electrode 4. The sheet resistivity is compared with a preset reference value, and a gas flow rate controller 10 is controlled based on the difference. By this method, the supply amts. of the inert gas and active gas flowing in gas inlet pipes 5(5A-5D) are independently controlled by the gas flow rate controller 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19480587A JPS6439363A (en) | 1987-08-04 | 1987-08-04 | Method and device for forming thin film of conductive and transparent metal oxide by reactive sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19480587A JPS6439363A (en) | 1987-08-04 | 1987-08-04 | Method and device for forming thin film of conductive and transparent metal oxide by reactive sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6439363A true JPS6439363A (en) | 1989-02-09 |
Family
ID=16330550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19480587A Pending JPS6439363A (en) | 1987-08-04 | 1987-08-04 | Method and device for forming thin film of conductive and transparent metal oxide by reactive sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6439363A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02225663A (en) * | 1989-02-27 | 1990-09-07 | Tokuda Seisakusho Ltd | Sputtering device |
| JPH0790572A (en) * | 1993-04-22 | 1995-04-04 | Balzers Ag | Apparatus and method for introduction of gas |
| JP2008170521A (en) * | 2007-01-09 | 2008-07-24 | Toppan Printing Co Ltd | Method for producing transparent conductive thin film, sputtering apparatus therefor, and color filter using the same |
-
1987
- 1987-08-04 JP JP19480587A patent/JPS6439363A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02225663A (en) * | 1989-02-27 | 1990-09-07 | Tokuda Seisakusho Ltd | Sputtering device |
| JPH0790572A (en) * | 1993-04-22 | 1995-04-04 | Balzers Ag | Apparatus and method for introduction of gas |
| JP2008170521A (en) * | 2007-01-09 | 2008-07-24 | Toppan Printing Co Ltd | Method for producing transparent conductive thin film, sputtering apparatus therefor, and color filter using the same |
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