JPS644021A - Reflection-type x-ray mask - Google Patents

Reflection-type x-ray mask

Info

Publication number
JPS644021A
JPS644021A JP15906087A JP15906087A JPS644021A JP S644021 A JPS644021 A JP S644021A JP 15906087 A JP15906087 A JP 15906087A JP 15906087 A JP15906087 A JP 15906087A JP S644021 A JPS644021 A JP S644021A
Authority
JP
Japan
Prior art keywords
substance
composed mainly
soft
multilayered film
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15906087A
Other languages
Japanese (ja)
Other versions
JP2614861B2 (en
Inventor
Hiroo Kinoshita
Takashi Kaneko
Toyoki Kitayama
Nobuyuki Takeuchi
Sunao Ishihara
Hideo Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15906087A priority Critical patent/JP2614861B2/en
Publication of JPS644021A publication Critical patent/JPS644021A/en
Application granted granted Critical
Publication of JP2614861B2 publication Critical patent/JP2614861B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enhance the ease of handling and the accuracy of a pattern by a method wherein a multilayered film where a thin film composed mainly of a heavy element and another thin film composed mainly of a light element are formed alternately is used as a plane of reflection and a layer where one part of the multilayered film has been attached to a different substance or it has been treated is used as an absorption layer. CONSTITUTION:A multilayered film where a substance composed mainly of a heavy element and another substance composed mainly of a light element are laminated mutually is formed on a substrate; a patterned intermediate layer 9' which is composed of a substance absorbing soft X-rays is formed on the film. A gap d at a laminate of the multilayered film 8 between the substance composed mainly of the heavy element and the substance mainly composed of the light element is set in such a way that it can satisfy Bragg's condition for reflection in accordance with a wavelength lambdaand an incidence angle theta of incident soft X-rays. A thickness of the intermediate layer 9' is set in such a way that a contrast between the soft X-rays reflected by the multilayered film 8 and the soft X-rays transmitting the intermediate layer 9' can cause an attenuation amount which produces a sufficient contrast to form a pattern by means of reduction projection.
JP15906087A 1987-06-26 1987-06-26 Reflective X-ray mask Expired - Lifetime JP2614861B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15906087A JP2614861B2 (en) 1987-06-26 1987-06-26 Reflective X-ray mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15906087A JP2614861B2 (en) 1987-06-26 1987-06-26 Reflective X-ray mask

Publications (2)

Publication Number Publication Date
JPS644021A true JPS644021A (en) 1989-01-09
JP2614861B2 JP2614861B2 (en) 1997-05-28

Family

ID=15685343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15906087A Expired - Lifetime JP2614861B2 (en) 1987-06-26 1987-06-26 Reflective X-ray mask

Country Status (1)

Country Link
JP (1) JP2614861B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175734A (en) * 1987-12-29 1989-07-12 Canon Inc Reflective mask and its manufacturing method
JPH0749419A (en) * 1993-01-28 1995-02-21 Gold Star Co Ltd Preparation of hologram optical device
JP2004510343A (en) * 2000-09-26 2004-04-02 ザ　リージェンツ　オブ　ザ　ユニヴァーシティ　オブ　カリフォルニア Reduction of multilayer defects on reticle
JP2015090421A (en) * 2013-11-06 2015-05-11 Hoya株式会社 Substrate with thin film and method for manufacturing transfer mask
JP2015529855A (en) * 2012-08-30 2015-10-08 ケーエルエー−テンカー コーポレイション Measurement of wavefront aberration of optical system of EUV mask inspection system
JP2016173392A (en) * 2015-03-16 2016-09-29 株式会社東芝 Light reflection type lithography mask, method of manufacturing the same, method of producing mask data, and mask blank

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168917A (en) * 1985-01-23 1986-07-30 Hitachi Ltd Exposing method and exposing apparatus
JPS63201656A (en) * 1987-02-18 1988-08-19 Canon Inc Multilayer reflective mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61168917A (en) * 1985-01-23 1986-07-30 Hitachi Ltd Exposing method and exposing apparatus
JPS63201656A (en) * 1987-02-18 1988-08-19 Canon Inc Multilayer reflective mask

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01175734A (en) * 1987-12-29 1989-07-12 Canon Inc Reflective mask and its manufacturing method
JPH0749419A (en) * 1993-01-28 1995-02-21 Gold Star Co Ltd Preparation of hologram optical device
JP2004510343A (en) * 2000-09-26 2004-04-02 ザ　リージェンツ　オブ　ザ　ユニヴァーシティ　オブ　カリフォルニア Reduction of multilayer defects on reticle
JP2015529855A (en) * 2012-08-30 2015-10-08 ケーエルエー−テンカー コーポレイション Measurement of wavefront aberration of optical system of EUV mask inspection system
JP2018028670A (en) * 2012-08-30 2018-02-22 ケーエルエー−テンカー コーポレイション Wave front aberration metrology of optics of euv mask inspection system
JP2015090421A (en) * 2013-11-06 2015-05-11 Hoya株式会社 Substrate with thin film and method for manufacturing transfer mask
JP2016173392A (en) * 2015-03-16 2016-09-29 株式会社東芝 Light reflection type lithography mask, method of manufacturing the same, method of producing mask data, and mask blank

Also Published As

Publication number Publication date
JP2614861B2 (en) 1997-05-28

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