JPS6441265A - Optical integrated element - Google Patents

Optical integrated element

Info

Publication number
JPS6441265A
JPS6441265A JP19847187A JP19847187A JPS6441265A JP S6441265 A JPS6441265 A JP S6441265A JP 19847187 A JP19847187 A JP 19847187A JP 19847187 A JP19847187 A JP 19847187A JP S6441265 A JPS6441265 A JP S6441265A
Authority
JP
Japan
Prior art keywords
active layer
base layer
layer
optical integrated
integrated element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19847187A
Other languages
Japanese (ja)
Other versions
JP2527197B2 (en
Inventor
Tetsuo Shiba
Etsuji Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19847187A priority Critical patent/JP2527197B2/en
Publication of JPS6441265A publication Critical patent/JPS6441265A/en
Application granted granted Critical
Publication of JP2527197B2 publication Critical patent/JP2527197B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To make the leak current from an active layer not be absorbed even if it reaches a base layer, and prevent the crosstalk, by forming the forbidden bandwidth of the base layer of a heterobipolar transistor, so as to make it larger than that of the active layer of a light emitting element part. CONSTITUTION:The active layer 9 of a hetero-bipolar transistor part is formed of In 0.65 Ga 0.35 As 0.79 P 0.21, and the base layer 14 is formed of P-type In 0.76 Ga 0.24 As 0.55 P 0.45. The forbidden bandwidth of the base layer 14 is made larger than that of the active layer 9. In an optical integrated element constituted in this manner, even if a leak light from the active layer 9 reaches the base layer 14, it is not absorbed, so that the operation of HBT is not affected. Therefore, crosstalk does not occur.
JP19847187A 1987-08-06 1987-08-06 Optical integrated device Expired - Lifetime JP2527197B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19847187A JP2527197B2 (en) 1987-08-06 1987-08-06 Optical integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19847187A JP2527197B2 (en) 1987-08-06 1987-08-06 Optical integrated device

Publications (2)

Publication Number Publication Date
JPS6441265A true JPS6441265A (en) 1989-02-13
JP2527197B2 JP2527197B2 (en) 1996-08-21

Family

ID=16391660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19847187A Expired - Lifetime JP2527197B2 (en) 1987-08-06 1987-08-06 Optical integrated device

Country Status (1)

Country Link
JP (1) JP2527197B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7131217B2 (en) 2002-08-01 2006-11-07 Samsung Electronics Co., Ltd. Apparatus and method for drying semiconductor wafers using IPA vapor drying method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274790A (en) * 1986-05-23 1987-11-28 Nippon Telegr & Teleph Corp <Ntt> Optical and electronic integrated circuit and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274790A (en) * 1986-05-23 1987-11-28 Nippon Telegr & Teleph Corp <Ntt> Optical and electronic integrated circuit and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7131217B2 (en) 2002-08-01 2006-11-07 Samsung Electronics Co., Ltd. Apparatus and method for drying semiconductor wafers using IPA vapor drying method

Also Published As

Publication number Publication date
JP2527197B2 (en) 1996-08-21

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