JPS551193A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS551193A
JPS551193A JP6104779A JP6104779A JPS551193A JP S551193 A JPS551193 A JP S551193A JP 6104779 A JP6104779 A JP 6104779A JP 6104779 A JP6104779 A JP 6104779A JP S551193 A JPS551193 A JP S551193A
Authority
JP
Japan
Prior art keywords
region
type
injection
transistor
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6104779A
Other languages
Japanese (ja)
Inventor
Takao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6104779A priority Critical patent/JPS551193A/en
Publication of JPS551193A publication Critical patent/JPS551193A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To improve the efficiency of the injector while raising the current amplification rate of NPN transistors with higher emitter injection effeciency of the respective transistors in I<2>L composition. CONSTITUTION:I<2>L is composed of a horizontal PNP transistor Tr having a p-type injection region 6 as the emitter, N-type region 5 as the base and a P-type region 7 as the collector and a NPN transistor Tr having a N-type region 5 as the emitter, a P-type region 7 as the base and a N-type region 8 as the collecter. A N region 7 is provided in contact with the regions 5, 6 and 7 in such a manner as to be higher in concentration than the region 5, while a separation region 11 is provided on the side of the region avoiding the portion facing the region 7. As a result, the high density N-type region 10 enables effective reaching of a hole to the region of PNP transistor thereby improving the injection effiiciency of electron to the region 7 of the NPN transistor and the current amplification rate of the transistor. In addition, the separate region allows the hole to be injected into the region 5 from the region 6 of the PNP transistor. Thus, the injection efficiency can be further improved.
JP6104779A 1979-05-17 1979-05-17 Semiconductor device Pending JPS551193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6104779A JPS551193A (en) 1979-05-17 1979-05-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6104779A JPS551193A (en) 1979-05-17 1979-05-17 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50152516A Division JPS5275281A (en) 1975-12-19 1975-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS551193A true JPS551193A (en) 1980-01-07

Family

ID=13159918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6104779A Pending JPS551193A (en) 1979-05-17 1979-05-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS551193A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI797673B (en) * 2020-07-27 2023-04-01 大陸商北京芯海視界三維科技有限公司 Light emitting module and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI797673B (en) * 2020-07-27 2023-04-01 大陸商北京芯海視界三維科技有限公司 Light emitting module and display device

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