JPS6442152A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6442152A
JPS6442152A JP62198534A JP19853487A JPS6442152A JP S6442152 A JPS6442152 A JP S6442152A JP 62198534 A JP62198534 A JP 62198534A JP 19853487 A JP19853487 A JP 19853487A JP S6442152 A JPS6442152 A JP S6442152A
Authority
JP
Japan
Prior art keywords
interconnection
photosensitive
aluminum
photolithography technique
hole pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198534A
Other languages
Japanese (ja)
Inventor
Yasushi Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62198534A priority Critical patent/JPS6442152A/en
Publication of JPS6442152A publication Critical patent/JPS6442152A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make through hole resistance the same as multilayer interconnection process using an inorganic material, by using a photosensitive polyimide resin as an interlayer insulating film of a multilayer interconnection and providing O2 plasma treatment before the interconnections of layers are connected. CONSTITUTION:Any device structure is formed on a silicon semiconductor substrate 1, and then a first interconnection 3 of aluminum is formed through a silicon dioxide film 2 thereon. Then, a photosensitive polymide resin 4 is applied and prebaked. A through hole pattern is formed by photolithography technique and ashed with O2 plasma 5 on the whole surface. Then, an aluminum interconnection of the second layer is deposited and a second interconnection 6 is patterned by the photolithography technique. As a result, it is possible to completely eliminate a residual element of the photosensitive polymide resin and impurities on the through hole pattern.
JP62198534A 1987-08-07 1987-08-07 Manufacture of semiconductor device Pending JPS6442152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198534A JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198534A JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6442152A true JPS6442152A (en) 1989-02-14

Family

ID=16392751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198534A Pending JPS6442152A (en) 1987-08-07 1987-08-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6442152A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140520A (en) * 1990-04-30 1994-05-20 Internatl Business Mach Corp <Ibm> Method for forming multi-layer conductor / insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140520A (en) * 1990-04-30 1994-05-20 Internatl Business Mach Corp <Ibm> Method for forming multi-layer conductor / insulator coplanar thin film using photosensitive polyimide polymer composition and semiconductor structure manufactured by the method

Similar Documents

Publication Publication Date Title
JPS5748249A (en) Semiconductor device
JPS562654A (en) Semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS61107746A (en) Manufacture of semiconductor device
JPS5617041A (en) Manufacture of semiconductor device
JPS5543847A (en) Forming method of multilayer interconnection
JPS54158884A (en) Manufacture of semiconductor device
JPS57162448A (en) Formation of multilayer wiring
JPS61150237A (en) Electronic devices with multilayer wiring
JPS561547A (en) Semiconductor device
JPS615550A (en) Semiconductor device and manufacture thereof
JPS57162449A (en) Formation of multilayer wiring
JPS6412551A (en) Formation of multilayer interconnection
JPS5779648A (en) Multilayer wiring of semiconductor device
JPH02121350A (en) Formation of multilayer interconnection
JPS56125857A (en) Manufacture of semiconductor device
JPH02151053A (en) Semiconductor device
JPS57208160A (en) Semiconductor device
JPS6050941A (en) Manufacture of multilayer interconnection member
JPS57187954A (en) Formation of buried wiring
JPS56161655A (en) Multilayer aluminum wiring for semiconductor device
JPH02113566A (en) semiconductor integrated circuit
JPS6355784B2 (en)
KR950021354A (en) Method of forming interlayer insulating film of semiconductor device
JPS5750453A (en) Multilayer wiring method of semiconductor device