JPS6442166A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS6442166A
JPS6442166A JP62198249A JP19824987A JPS6442166A JP S6442166 A JPS6442166 A JP S6442166A JP 62198249 A JP62198249 A JP 62198249A JP 19824987 A JP19824987 A JP 19824987A JP S6442166 A JPS6442166 A JP S6442166A
Authority
JP
Japan
Prior art keywords
concentration layer
groove side
substrate
high concentration
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198249A
Other languages
Japanese (ja)
Inventor
Kenji Miura
Ban Nakajima
Kazushige Minegishi
Takashi Morie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62198249A priority Critical patent/JPS6442166A/en
Publication of JPS6442166A publication Critical patent/JPS6442166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve the isolation characteristics on a groove side surface by restricting a leakage current flowing along the groove side surface by locating an impurity distribution across a semiconductor substrate in the order of a high concentration layer, a low concentration layer, and a high concentration layer from the surface side. CONSTITUTION:A high concentration semiconductor substrate 100 includes thereon an epitaxial growth low concentration layer 101 containing the same polarity impurity as that of the substrate and a higher concentration layer 102 provided on said low concentration layer and containing the same polarity conductive impurity as that of the substrate on a principal surface region of the substrate. Since an impurity distribution is provided as p/p<->/p<+>, there is a potential barrier against electrons between p/p<->, allowing a reverse electric field to those electrons to be generated therebetween. For this, there is a reduction in rate of electrons, produced upon alpha-ray incidence, reaching the substrate surface, thus improving soft error resistance. Additionally, there exist the high concentration layer on the semiconductor substrate surface, threshold voltage of a parasitic MOSFET formed on the groove side surface can be considerably high, thereby restricting a leakage current flowing along the groove side surface assurance of good isolation characteristics on the groove side surface.
JP62198249A 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof Pending JPS6442166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198249A JPS6442166A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198249A JPS6442166A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6442166A true JPS6442166A (en) 1989-02-14

Family

ID=16387985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198249A Pending JPS6442166A (en) 1987-08-10 1987-08-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6442166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0682372A1 (en) * 1994-05-13 1995-11-15 Samsung Electronics Co., Ltd. DRAM device with upper and lower capacitor and production method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0682372A1 (en) * 1994-05-13 1995-11-15 Samsung Electronics Co., Ltd. DRAM device with upper and lower capacitor and production method

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