JPS6442840A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6442840A
JPS6442840A JP62200268A JP20026887A JPS6442840A JP S6442840 A JPS6442840 A JP S6442840A JP 62200268 A JP62200268 A JP 62200268A JP 20026887 A JP20026887 A JP 20026887A JP S6442840 A JPS6442840 A JP S6442840A
Authority
JP
Japan
Prior art keywords
metal silicide
compressive stress
insulating film
plasma nitride
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62200268A
Other languages
Japanese (ja)
Inventor
Makio Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62200268A priority Critical patent/JPS6442840A/en
Publication of JPS6442840A publication Critical patent/JPS6442840A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE:To maintain the flatness of a substrate as well as to prevent the deterioration in preciseness of microscopic working by a method wherein an insulating film of one or more layers having compressive stress is contained in the interlayer insulating film consisting of a high melting point metal silicide layer and other material layer. CONSTITUTION:A metal silicide 108 is insulated from a wiring material Al 111 by the plasma nitride 109 obtained by a CVD method and the interlayer insulating oxide film 110 obtained by a chemical vapor growth method. The tensile stress generated by the formation of the metal silicide layer 108 is alleviated by the compressive stress of the plasma nitride 109. Also, the plasma nitride is used as a stress alleviating material in this case, but a plasma oxide film, a TEOS film and the like can be also used as the insulating film having compressive stress. As a result, the flatness of the substrate can be maintained, and the preciseness of the microscopic working to be conducted later can also be improved.
JP62200268A 1987-08-11 1987-08-11 Semiconductor device Pending JPS6442840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62200268A JPS6442840A (en) 1987-08-11 1987-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62200268A JPS6442840A (en) 1987-08-11 1987-08-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6442840A true JPS6442840A (en) 1989-02-15

Family

ID=16421505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62200268A Pending JPS6442840A (en) 1987-08-11 1987-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6442840A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205615B2 (en) * 2003-06-16 2007-04-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device having internal stress film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205615B2 (en) * 2003-06-16 2007-04-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device having internal stress film
US7417289B2 (en) 2003-06-16 2008-08-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device having internal stress film
US7893501B2 (en) 2003-06-16 2011-02-22 Panasonic Corporation Semiconductor device including MISFET having internal stress film
US20110101422A1 (en) * 2003-06-16 2011-05-05 Panasonic Corporation Semiconductor device
US8203186B2 (en) 2003-06-16 2012-06-19 Panasonic Corporation Semiconductor device including a stress film
US8383486B2 (en) 2003-06-16 2013-02-26 Panasonic Corporation Method of manufacturing a semiconductor device including a stress film

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