JPS6445044A - Process of ion implantation - Google Patents

Process of ion implantation

Info

Publication number: JPS6445044A
Authority: JP; Japan
Prior art keywords: emitter; alloy; arsenic; boron; ion implantation
Prior art date: 1987-08-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP62200001A

Other languages

English (en)

Other versions

JPH0555968B2 (ja

Inventor

Hisashi Fukuda

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Oki Electric Industry Co Ltd

Original Assignee

Oki Electric Industry Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-08-12

Filing date

1987-08-12

Publication date

1989-02-17

1987-08-12 Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd

1987-08-12 Priority to JP62200001A priority Critical patent/JPS6445044A/ja

1988-08-02 Priority to US07/227,255 priority patent/US4892752A/en

1988-08-11 Priority to EP88307442A priority patent/EP0303486B1/en

1988-08-11 Priority to DE3855897T priority patent/DE3855897T2/de

1988-08-12 Priority to KR1019880010320A priority patent/KR920005348B1/ko

1989-02-17 Publication of JPS6445044A publication Critical patent/JPS6445044A/ja

1989-06-27 Priority to US07/371,976 priority patent/US4946706A/en

1993-08-18 Publication of JPH0555968B2 publication Critical patent/JPH0555968B2/ja

Status Granted legal-status Critical Current

Links

238000005468 ion implantation Methods 0.000 title abstract 3
238000000034 method Methods 0.000 title abstract 2
229910045601 alloy Inorganic materials 0.000 abstract 4
239000000956 alloy Substances 0.000 abstract 4
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
229910052785 arsenic Inorganic materials 0.000 abstract 3
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
229910052796 boron Inorganic materials 0.000 abstract 3
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 3
229910001325 element alloy Inorganic materials 0.000 abstract 2
238000010438 heat treatment Methods 0.000 abstract 2
239000000463 material Substances 0.000 abstract 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
238000000137 annealing Methods 0.000 abstract 1
239000013078 crystal Substances 0.000 abstract 1
230000006866 deterioration Effects 0.000 abstract 1
230000005496 eutectics Effects 0.000 abstract 1
229910052697 platinum Inorganic materials 0.000 abstract 1
239000010453 quartz Substances 0.000 abstract 1
229910052702 rhenium Inorganic materials 0.000 abstract 1
229910052710 silicon Inorganic materials 0.000 abstract 1
239000010703 silicon Substances 0.000 abstract 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1

Landscapes

Electron Sources, Ion Sources (AREA)

JP62200001A 1987-08-12 1987-08-12 Process of ion implantation Granted JPS6445044A (en)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
JP62200001A JPS6445044A (en)	1987-08-12	1987-08-12	Process of ion implantation
US07/227,255 US4892752A (en)	1987-08-12	1988-08-02	Method of ion implantation
EP88307442A EP0303486B1 (en)	1987-08-12	1988-08-11	Method of ion implantation
DE3855897T DE3855897T2 (de)	1987-08-12	1988-08-11	Verfahren zur Ionenimplantation
KR1019880010320A KR920005348B1 (ko)	1987-08-12	1988-08-12	이온주입방법
US07/371,976 US4946706A (en)	1987-08-12	1989-06-27	Method of ion implantation

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62200001A JPS6445044A (en)	1987-08-12	1987-08-12	Process of ion implantation

Publications (2)

Publication Number	Publication Date
JPS6445044A true JPS6445044A (en)	1989-02-17
JPH0555968B2 JPH0555968B2 (ja)	1993-08-18

Family

ID=16417144

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62200001A Granted JPS6445044A (en)	1987-08-12	1987-08-12	Process of ion implantation

Country Status (1)

Country	Link
JP (1)	JPS6445044A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0722730U (ja) *	1993-10-07	1995-04-25	源重加藤	手障害者用盆

1987
- 1987-08-12 JP JP62200001A patent/JPS6445044A/ja active Granted

Also Published As

Publication number	Publication date
JPH0555968B2 (ja)	1993-08-18

Similar Documents

Publication	Publication Date	Title
JPS53128993A (en)	1978-11-10	Method of doping highly pure silicon in arc heater
ATE70359T1 (de)	1991-12-15	Schwarzer strahler zum einsatz als emitter in eichbare gassensoren und verfahren zu seiner herstellung.
EP0267308A3 (en)	1990-03-21	Method and apparatus for dynamic power differential calorimetry
JPS57194518A (en)	1982-11-30	Manufacture of polycrystalline silicon
JPS6445045A (en)	1989-02-17	Process of ion implantation
JPS5694750A (en)	1981-07-31	Heating treatment device
JPS6428809A (en)	1989-01-31	Laser annealing device
JPS57202740A (en)	1982-12-11	Manufacture of semiconductor device
SU1405588A1 (ru)	1990-08-30	Способ изготовлени активной части радионуклидного источника
Yamakawa et al.	1988	Stage III recovery of electron-irradiated high-purity molybdenum
JPS6419656A (en)	1989-01-23	Manufacture of electron emitting element
Vykhodets et al.	1988	Diffusion of Oxygen in alpha-Titanium. IV. Measurement of the Oxygen Diffusion Coefficient in alpha-Titanium by Secondary Ion-Mass Spectrometry and Nuclear Reaction Methods
Kozhevnikov et al.	1981	Interpretation of the Dependence of the Rate of A-Centre Injection into n-Type Silicon on Electron Irradiation Intensity
JPS52114389A (en)	1977-09-26	Method and apparatus for measurement of photochemical reaction heat
JPS6461621A (en)	1989-03-08	Method and instrument for measuring absorptivity and radiation rate of solid material
JPS6482634A (en)	1989-03-28	Manufacture of semiconductor device
JPS5666056A (en)	1981-06-04	Manufacture of semiconductor device
JPS51136286A (en)	1976-11-25	Ion implantation using noncrystalline carchogenide thin film as mask
IL57788A (en)	1982-03-31	Microbiological process for preparing androst-4-ene 3,17-dione and novel laboratory mutants
SU730200A1 (ru)	1981-06-07	Способ изготовлени германиевых термо-СОпРОТиВлЕНий дл НизКиХ ТЕМпиРАТуР
JPS6441210A (en)	1989-02-13	Manufacture of sic thin-film
Afonin et al.	1979	Effect of Electron Irradiation on the Migration of Gold in Silicon
HK89087A (en)	1987-12-04	Method of manufacturing semiconductor substrate and substrate so manufactured
JPS5359892A (en)	1978-05-30	Manufacturing method of resistant compound
JPH022154A (ja)	1990-01-08	半導体装置の製造方法

Legal Events

Date	Code	Title	Description
2007-08-12	EXPY	Cancellation because of completion of term