JPS6417423A - Semiconductor crystal growth device - Google Patents

Semiconductor crystal growth device

Info

Publication number
JPS6417423A
JPS6417423A JP17322387A JP17322387A JPS6417423A JP S6417423 A JPS6417423 A JP S6417423A JP 17322387 A JP17322387 A JP 17322387A JP 17322387 A JP17322387 A JP 17322387A JP S6417423 A JPS6417423 A JP S6417423A
Authority
JP
Japan
Prior art keywords
reaction tube
raw gas
substrate
semiconductor substrate
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17322387A
Other languages
Japanese (ja)
Inventor
Hideki Yakida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17322387A priority Critical patent/JPS6417423A/en
Publication of JPS6417423A publication Critical patent/JPS6417423A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C05—FERTILISERS; MANUFACTURE THEREOF
    • C05F—ORGANIC FERTILISERS NOT COVERED BY SUBCLASSES C05B, C05C, e.g. FERTILISERS FROM WASTE OR REFUSE
    • C05F17/00—Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation
    • C05F17/20—Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation using specific microorganisms or substances, e.g. enzymes, for activating or stimulating the treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/141—Feedstock
    • Y02P20/145—Feedstock the feedstock being materials of biological origin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/40—Bio-organic fraction processing; Production of fertilisers from the organic fraction of waste or refuse

Landscapes

  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Tropical Medicine & Parasitology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Biotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microbiology (AREA)
  • Molecular Biology (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To supply an unreacted raw gas uniformly on the whole surface of a substrate, by supplying the raw gas from the lower side of a vertical type reaction tube and tapering the reaction tube in the vicinity of a substrate holder and also smoothly tapering the substrate holder. CONSTITUTION:A raw gas 108 is supplied in the form of a smooth layer flow from a lower side of a vertical type reaction tube 101. Then the reaction tube 101 is tapered in the vicinity of a holder 102 of a semiconductor substrate 104. The substrate holder 102 is also tapered more smoothly than the reaction tube 101. Hence the raw gas which touches the surface of the semiconductor substrate and finishes a chemical reaction to be heated, is moved quickly to an upward exhaustion system. A layer flow in the vicinity of the surface of the semiconductor substrate is not disturbed, and at the same time the tapered shapes of the reaction tube 101 and the substrate holder 102 permit an unreacted raw gas to be supplied uniformly to the whole surface of the semiconductor substrate.
JP17322387A 1987-07-10 1987-07-10 Semiconductor crystal growth device Pending JPS6417423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17322387A JPS6417423A (en) 1987-07-10 1987-07-10 Semiconductor crystal growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17322387A JPS6417423A (en) 1987-07-10 1987-07-10 Semiconductor crystal growth device

Publications (1)

Publication Number Publication Date
JPS6417423A true JPS6417423A (en) 1989-01-20

Family

ID=15956418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17322387A Pending JPS6417423A (en) 1987-07-10 1987-07-10 Semiconductor crystal growth device

Country Status (1)

Country Link
JP (1) JPS6417423A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021708A (en) * 2006-07-11 2008-01-31 Taiyo Nippon Sanso Corp Vapor growth equipment
KR20210082927A (en) * 2019-12-26 2021-07-06 주식회사 우진에프에이 Wafer Heating Furnace

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021708A (en) * 2006-07-11 2008-01-31 Taiyo Nippon Sanso Corp Vapor growth equipment
KR20210082927A (en) * 2019-12-26 2021-07-06 주식회사 우진에프에이 Wafer Heating Furnace

Similar Documents

Publication Publication Date Title
ATE237703T1 (en) METHOD AND REACTOR FOR GROWING SILICON CARBIDE CRYSTALS BY CHEMICAL VAPOR DEPOSITION
HU907216D0 (en) Process for producing radiation sensitive tool
JPS57187033A (en) Vapor phase chemical growth device
JPS5673694A (en) Vertical type vapor phase growing method and apparatus
JPS6412522A (en) Semiconductor crystal epitaxy method
JPS6484717A (en) Semiconductor thin film vapor growth apparatus
JPS6481214A (en) Vapor growth apparatus
JPS5713746A (en) Vapor-phase growing apparatus
JPS55110030A (en) Method for vapor growth
JPS6481215A (en) Vapor growth apparatus
JPS6441211A (en) Semiconductor growth device
JPS55124232A (en) Application method of substrate treatment solution and the device therefor
JPS647622A (en) Device for treatment of semiconductor substrate
JPS61271822A (en) Continuous vapor growth apparatus
JPS5542230A (en) Vapor phase growing device
JPH044736U (en)
JPS5687329A (en) Method of treatment of semiconductor wafer
JPS57192032A (en) Forming method for insulating film
JPS6439718A (en) Manufacture of thin film
JPS57184213A (en) Vapor growth device for semiconductor
JPS6481309A (en) Vapor growth apparatus
JPS54137973A (en) Formation method of plasma nitride
JPS5748227A (en) Manufacture of semiconductor device
JPS55110031A (en) Method for vapor growth
JPS5778131A (en) Manufacture of amorphous semiconductor fil,