JPS6449263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6449263A
JPS6449263A JP20667687A JP20667687A JPS6449263A JP S6449263 A JPS6449263 A JP S6449263A JP 20667687 A JP20667687 A JP 20667687A JP 20667687 A JP20667687 A JP 20667687A JP S6449263 A JPS6449263 A JP S6449263A
Authority
JP
Japan
Prior art keywords
semiconductor device
groove
shaped groove
overvoltage
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20667687A
Other languages
Japanese (ja)
Inventor
Fumiaki Kirihata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP20667687A priority Critical patent/JPS6449263A/en
Publication of JPS6449263A publication Critical patent/JPS6449263A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To strengthen the breakdown strength against an overvoltage by a method wherein, in a semiconductor device having a U-shaped groove formed on the surface of the semiconductor device, the inner surface of the U-shaped groove is covered with a metal so that a strong electric-field region can be formed uniformly by a whole bottom part. CONSTITUTION:A U-shaped groove 5 is formed in a semiconductor device 11 by an etching operation. A metal is evaporated on an inner face of the groove and an electrode 6 is formed. Because the electrode 6 covers the inner face of the groove 5, a region which uniformly generates a strong electric field in a P-base layer 3 at the bottom of the groove 5 is formed. By this setup, a large breakdown electric current is secured; the breakdown strength against an overvoltage is thereby enhanced.
JP20667687A 1987-08-20 1987-08-20 Semiconductor device Pending JPS6449263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20667687A JPS6449263A (en) 1987-08-20 1987-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20667687A JPS6449263A (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6449263A true JPS6449263A (en) 1989-02-23

Family

ID=16527271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20667687A Pending JPS6449263A (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6449263A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480965A (en) * 1990-07-24 1992-03-13 Hitachi Ltd Overvoltage self-protection type semiconductor device
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480965A (en) * 1990-07-24 1992-03-13 Hitachi Ltd Overvoltage self-protection type semiconductor device
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure

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