JPS645014A - Manufacturing equipment for semiconductor - Google Patents

Manufacturing equipment for semiconductor

Info

Publication number
JPS645014A
JPS645014A JP16166887A JP16166887A JPS645014A JP S645014 A JPS645014 A JP S645014A JP 16166887 A JP16166887 A JP 16166887A JP 16166887 A JP16166887 A JP 16166887A JP S645014 A JPS645014 A JP S645014A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
heat transfer
tray
transfer medium
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16166887A
Other languages
Japanese (ja)
Inventor
Akira Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16166887A priority Critical patent/JPS645014A/en
Publication of JPS645014A publication Critical patent/JPS645014A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

PURPOSE:To make the heat absorption efficiency of a semiconductor substrate uniform, and control precisely the temperature, by providing a heat transfer medium tray to heat a semiconductor substrate being a body to be heated by utilizing thermal conduction, and controlling the temperature of the heat transfer medium tray by a temperature measuring means. CONSTITUTION:On a quartz tray 9, a heat transfer medium tray 10 is mounted, and thereon a semiconductor substrate 8 is mounted. These are inserted into a quartz tube 2 from a substrate inserting port 1a. After the substrate inserting port 1a is closed by a reaction tube door 4, and the inside of the quartz tube 2 is replaced with nitrogen gas, halogen lamps as a heating source are turned on. The upper surface side of the semiconductor substrate 8 and the heat transfer tray 10 are heated by the upper and the lower lamps 3, and the lower surface side of the semiconductor substrate 8 is heated by the effect of thermal conduction of the heat transfer medium tray 10. Thereby, the uniform heat absorption characteristics of the semiconductor substrate 8 can be obtained.
JP16166887A 1987-06-29 1987-06-29 Manufacturing equipment for semiconductor Pending JPS645014A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16166887A JPS645014A (en) 1987-06-29 1987-06-29 Manufacturing equipment for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16166887A JPS645014A (en) 1987-06-29 1987-06-29 Manufacturing equipment for semiconductor

Publications (1)

Publication Number Publication Date
JPS645014A true JPS645014A (en) 1989-01-10

Family

ID=15739567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16166887A Pending JPS645014A (en) 1987-06-29 1987-06-29 Manufacturing equipment for semiconductor

Country Status (1)

Country Link
JP (1) JPS645014A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing

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