JPS645036A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS645036A
JPS645036A JP16061087A JP16061087A JPS645036A JP S645036 A JPS645036 A JP S645036A JP 16061087 A JP16061087 A JP 16061087A JP 16061087 A JP16061087 A JP 16061087A JP S645036 A JPS645036 A JP S645036A
Authority
JP
Japan
Prior art keywords
generates
difference
circuiting
substrate
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16061087A
Other languages
Japanese (ja)
Inventor
Akio Takabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16061087A priority Critical patent/JPS645036A/en
Publication of JPS645036A publication Critical patent/JPS645036A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To detect a chip in which electric short-circuiting generates, by utilizing a first metal film attaching and remaining on the side surface of a step difference without being eliminated, and detecting a sharp step-difference in which a splitting state of electrode metal generates. CONSTITUTION:A coating film 3 of titanium on a substrate 1 is eliminated by a metal eliminating method of intense anisotropy. A specific amount of titanium attaching on the side-wall of a step-difference part 4 is left as it is. An aluminum layer 5 of electrode metal is spread on the substrate 1. Then a splitting part 6 generates in the step-difference part 4. When the step-difference part 4 exists across the lower surfaces of different electrodes on the substrate 1 surface, an electric short-circuiting state can be discriminated, by the effect of the titanium film attaching on the side-wall of the step-difference part 4. Thereby, a chip in which electric short-circuiting generates can be detected.
JP16061087A 1987-06-26 1987-06-26 Manufacture of semiconductor device Pending JPS645036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16061087A JPS645036A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16061087A JPS645036A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS645036A true JPS645036A (en) 1989-01-10

Family

ID=15718659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16061087A Pending JPS645036A (en) 1987-06-26 1987-06-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS645036A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008099961A1 (en) 2007-02-16 2008-08-21 Kao Corporation Catalyst for alcohol production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008099961A1 (en) 2007-02-16 2008-08-21 Kao Corporation Catalyst for alcohol production

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