JPS6451663A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number: JPS6451663A
Authority: JP; Japan
Prior art keywords: electrode; thin film; film transistor; source electrode; gate electrode
Prior art date: 1987-08-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP62209518A

Other languages

English (en)

Other versions

JP2525615B2 (ja

Inventor

Takashi Nakazawa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seiko Epson Corp

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-08-24

Filing date

1987-08-24

Publication date

1989-02-27

1987-08-24 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

1987-08-24 Priority to JP62209518A priority Critical patent/JP2525615B2/ja

1989-02-27 Publication of JPS6451663A publication Critical patent/JPS6451663A/ja

1996-08-21 Application granted granted Critical

1996-08-21 Publication of JP2525615B2 publication Critical patent/JP2525615B2/ja

2011-08-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000010409 thin film Substances 0.000 title abstract 3
239000004065 semiconductor Substances 0.000 abstract 2
238000006073 displacement reaction Methods 0.000 abstract 1
239000010408 film Substances 0.000 abstract 1

Landscapes

Liquid Crystal (AREA)
Thin Film Transistor (AREA)

JP62209518A 1987-08-24 1987-08-24 トランジスタ Expired - Lifetime JP2525615B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP62209518A JP2525615B2 (ja)	1987-08-24	1987-08-24	トランジスタ

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62209518A JP2525615B2 (ja)	1987-08-24	1987-08-24	トランジスタ

Publications (2)

Publication Number	Publication Date
JPS6451663A true JPS6451663A (en)	1989-02-27
JP2525615B2 JP2525615B2 (ja)	1996-08-21

Family

ID=16574118

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP62209518A Expired - Lifetime JP2525615B2 (ja)	1987-08-24	1987-08-24	トランジスタ

Country Status (1)

Country	Link
JP (1)	JP2525615B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH05241194A (ja) *	1992-02-27	1993-09-21	G T C:Kk	アクティブマトリックス液晶表示装置
JP2003186050A (ja) *	2001-11-23	2003-07-03	Chi Mei Electronics Corp	低ちらつき液晶パネル
KR100776514B1 (ko) *	2000-12-30	2007-11-16	엘지.필립스 엘시디 주식회사	액정표시장치 및 그 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63294531A (ja) *	1987-05-27	1988-12-01	Hosiden Electronics Co Ltd	液晶表示素子

1987
- 1987-08-24 JP JP62209518A patent/JP2525615B2/ja not_active Expired - Lifetime

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS63294531A (ja) *	1987-05-27	1988-12-01	Hosiden Electronics Co Ltd	液晶表示素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH05241194A (ja) *	1992-02-27	1993-09-21	G T C:Kk	アクティブマトリックス液晶表示装置
KR100776514B1 (ko) *	2000-12-30	2007-11-16	엘지.필립스 엘시디 주식회사	액정표시장치 및 그 제조방법
JP2003186050A (ja) *	2001-11-23	2003-07-03	Chi Mei Electronics Corp	低ちらつき液晶パネル

Also Published As

Publication number	Publication date
JP2525615B2 (ja)	1996-08-21

Similar Documents

Publication	Publication Date	Title
EP0366116A3 (en)	1992-04-08	Thin film transistor panel and manufacturing method thereof
KR910001971A (ko)	1991-01-31	반도체 장치의 제조방법
TW340261B (en)	1998-09-11	Semiconductor device and the manufacturing method
JPS56162875A (en)	1981-12-15	Semiconductor device
JPS6451663A (en)	1989-02-27	Thin film transistor
JPS5341188A (en)	1978-04-14	Mis type semiconductor device
JPS6468968A (en)	1989-03-15	Thin film transistor
JPS56116669A (en)	1981-09-12	Field effect transistor
JPS5384571A (en)	1978-07-26	Insulating gate type field effect transistor and its manufacture
JPS6415981A (en)	1989-01-19	Thin film transistor
JPS6422054A (en)	1989-01-25	Manufacture of capacitor of semiconductor device
JPS5743465A (en)	1982-03-11	Manufacture of mis type field effect transistor
JPS6476037A (en)	1989-03-22	Thin film transistor panel
JPS5364481A (en)	1978-06-08	Production of schottky type field effect transistor
JPS5257786A (en)	1977-05-12	Field effect transistor
JPS6417501A (en)	1989-01-20	Semiconductor device
JPS6468969A (en)	1989-03-15	Thin film transistor
JPS53108383A (en)	1978-09-21	Semiconductor deivce and its manufacture
JPS539488A (en)	1978-01-27	Production of semiconductor device
JPS538084A (en)	1978-01-25	Mis type semiconductor device
KR920013751A (ko)	1992-07-29	박막 트랜지스터
JPS5339087A (en)	1978-04-10	Integrated circuit
JPS5683074A (en)	1981-07-07	Mos integrated circuit
JPS5779661A (en)	1982-05-18	Semiconductor device
JPS57208176A (en)	1982-12-21	Semiconductor negative resistance element

Legal Events

Date

Code

Title

Description

2007-06-19

FPAY

Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080531

Year of fee payment: 12

2007-08-24

EXPY

Cancellation because of completion of term

2007-11-07

FPAY

Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080531

Year of fee payment: 12