JPS5257786A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5257786A
JPS5257786A JP13369975A JP13369975A JPS5257786A JP S5257786 A JPS5257786 A JP S5257786A JP 13369975 A JP13369975 A JP 13369975A JP 13369975 A JP13369975 A JP 13369975A JP S5257786 A JPS5257786 A JP S5257786A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
portions
active layer
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13369975A
Other languages
Japanese (ja)
Inventor
Yusuke Tajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13369975A priority Critical patent/JPS5257786A/en
Publication of JPS5257786A publication Critical patent/JPS5257786A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To avoid the field concentration on the side edge portions of drain directly beneath gate electrode, improve the dielectric strength of FET and obtain higher output by forming a recess in the active layer between gate and drain so that the portions of the active layer becomes narrower than other portions.
COPYRIGHT: (C)1977,JPO&Japio
JP13369975A 1975-11-07 1975-11-07 Field effect transistor Pending JPS5257786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13369975A JPS5257786A (en) 1975-11-07 1975-11-07 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13369975A JPS5257786A (en) 1975-11-07 1975-11-07 Field effect transistor

Publications (1)

Publication Number Publication Date
JPS5257786A true JPS5257786A (en) 1977-05-12

Family

ID=15110808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13369975A Pending JPS5257786A (en) 1975-11-07 1975-11-07 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5257786A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157269A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor device
JPS5880195A (en) * 1981-10-26 1983-05-14 ヒューズ・エアクラフト・カンパニー Shift register
JPH01165174A (en) * 1987-12-21 1989-06-29 Nec Corp Field effect transistor
JPH02125473A (en) * 1988-11-02 1990-05-14 Nec Corp Gaas dual gate fet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157269A (en) * 1979-05-25 1980-12-06 Fujitsu Ltd Semiconductor device
JPS5880195A (en) * 1981-10-26 1983-05-14 ヒューズ・エアクラフト・カンパニー Shift register
JPH01165174A (en) * 1987-12-21 1989-06-29 Nec Corp Field effect transistor
JPH02125473A (en) * 1988-11-02 1990-05-14 Nec Corp Gaas dual gate fet

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