JPS6468726A - Thin film transistor and its manufacture - Google Patents

Thin film transistor and its manufacture

Info

Publication number
JPS6468726A
JPS6468726A JP62225819A JP22581987A JPS6468726A JP S6468726 A JPS6468726 A JP S6468726A JP 62225819 A JP62225819 A JP 62225819A JP 22581987 A JP22581987 A JP 22581987A JP S6468726 A JPS6468726 A JP S6468726A
Authority
JP
Japan
Prior art keywords
electrode
transparent
insulating layer
picture element
transparent insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62225819A
Other languages
Japanese (ja)
Other versions
JP2598420B2 (en
Inventor
Haruo Wakai
Nobuyuki Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP62225819A priority Critical patent/JP2598420B2/en
Priority to US07/241,304 priority patent/US5032883A/en
Publication of JPS6468726A publication Critical patent/JPS6468726A/en
Priority to US07/503,269 priority patent/US5166085A/en
Priority to US07/503,268 priority patent/US5003356A/en
Priority to US07/503,270 priority patent/US5055899A/en
Priority to US07/831,002 priority patent/US5229644A/en
Priority to US08/041,537 priority patent/US5327001A/en
Application granted granted Critical
Publication of JP2598420B2 publication Critical patent/JP2598420B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To eliminate a short circuit between a transparent picture electrode and a drain electrode and to widen effective display area by providing the transparent picture element electrode on a transparent insulating layer covering a transparent insulating substrate where a transistor (TR) area is formed. CONSTITUTION:The TR area consisting of a gate electrode, an insulating layer 11, a semiconductor layer 16, a contact layer 15, a drain electrode 12, and a source electrode 13, and a signal line 3 and a scanning line 4 are covered with the transparent insulating layer 18 having a flat surface. Then a transparent picture element electrode 5 of about 1,000Angstrom in thickness is formed on the transparent insulating layer 18 and connected to a source electrode 13 through a contact hole 19. Therefore, the drain electrode 12 and transparent picture element electrode 5 are formed on mutually different planes across the transparent insulating layer 18. Consequently, the distance between the signal line 3 and transparent picture element electrode 5 is increased and the short circuit between them is reduced greatly.
JP62225819A 1987-09-09 1987-09-09 Thin film transistor and method of manufacturing the same Expired - Lifetime JP2598420B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62225819A JP2598420B2 (en) 1987-09-09 1987-09-09 Thin film transistor and method of manufacturing the same
US07/241,304 US5032883A (en) 1987-09-09 1988-09-07 Thin film transistor and method of manufacturing the same
US07/503,269 US5166085A (en) 1987-09-09 1990-04-02 Method of manufacturing a thin film transistor
US07/503,268 US5003356A (en) 1987-09-09 1990-04-02 Thin film transistor array
US07/503,270 US5055899A (en) 1987-09-09 1990-04-02 Thin film transistor
US07/831,002 US5229644A (en) 1987-09-09 1992-02-05 Thin film transistor having a transparent electrode and substrate
US08/041,537 US5327001A (en) 1987-09-09 1993-04-01 Thin film transistor array having single light shield layer over transistors and gate and drain lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225819A JP2598420B2 (en) 1987-09-09 1987-09-09 Thin film transistor and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS6468726A true JPS6468726A (en) 1989-03-14
JP2598420B2 JP2598420B2 (en) 1997-04-09

Family

ID=16835296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225819A Expired - Lifetime JP2598420B2 (en) 1987-09-09 1987-09-09 Thin film transistor and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2598420B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247194A (en) * 1991-05-24 1993-09-21 Samsung Electronics Co., Ltd. Thin film transistor with an increased switching rate
JP2000214490A (en) * 1990-12-29 2000-08-04 Semiconductor Energy Lab Co Ltd Television receiver
KR100392052B1 (en) * 1995-12-11 2004-02-25 비오이 하이디스 테크놀로지 주식회사 Thin Film Transistor- Liquid Crystal display Module imbodying dot inversion
US7050137B2 (en) 2001-09-28 2006-05-23 Sharp Kabushiki Kaisha Substrate for use in a liquid crystal display and liquid crystal display using the same
JP2007140556A (en) * 2007-02-14 2007-06-07 Mitsubishi Electric Corp Thin film transistor manufacturing method and liquid crystal display device using the same
US7489367B1 (en) 1991-03-26 2009-02-10 Semiconductor Energy Laboratory, Co., Ltd. Electro-optical device and method for driving the same
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532026A (en) * 1978-08-25 1980-03-06 Seiko Epson Corp Liquid crystal display panel
JPS5842448A (en) * 1981-09-07 1983-03-11 三菱重工業株式会社 Manufacture of one-side corrugated cardboard
JPS61235816A (en) * 1985-04-11 1986-10-21 Asahi Glass Co Ltd Thin film active element
JPS63104026A (en) * 1986-10-21 1988-05-09 Nec Corp Manufacture of liquid crystal display device
JPS63279228A (en) * 1987-05-11 1988-11-16 Oki Electric Ind Co Ltd Liquid crystal display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532026A (en) * 1978-08-25 1980-03-06 Seiko Epson Corp Liquid crystal display panel
JPS5842448A (en) * 1981-09-07 1983-03-11 三菱重工業株式会社 Manufacture of one-side corrugated cardboard
JPS61235816A (en) * 1985-04-11 1986-10-21 Asahi Glass Co Ltd Thin film active element
JPS63104026A (en) * 1986-10-21 1988-05-09 Nec Corp Manufacture of liquid crystal display device
JPS63279228A (en) * 1987-05-11 1988-11-16 Oki Electric Ind Co Ltd Liquid crystal display device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214490A (en) * 1990-12-29 2000-08-04 Semiconductor Energy Lab Co Ltd Television receiver
US7489367B1 (en) 1991-03-26 2009-02-10 Semiconductor Energy Laboratory, Co., Ltd. Electro-optical device and method for driving the same
US5247194A (en) * 1991-05-24 1993-09-21 Samsung Electronics Co., Ltd. Thin film transistor with an increased switching rate
US7507991B2 (en) 1991-06-19 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and thin film transistor and method for forming the same
KR100392052B1 (en) * 1995-12-11 2004-02-25 비오이 하이디스 테크놀로지 주식회사 Thin Film Transistor- Liquid Crystal display Module imbodying dot inversion
US7050137B2 (en) 2001-09-28 2006-05-23 Sharp Kabushiki Kaisha Substrate for use in a liquid crystal display and liquid crystal display using the same
US7405781B2 (en) 2001-09-28 2008-07-29 Sharp Kabushiki Kaisha Substrate for use in a liquid crystal display having a patterned resin color filter layer
JP2007140556A (en) * 2007-02-14 2007-06-07 Mitsubishi Electric Corp Thin film transistor manufacturing method and liquid crystal display device using the same

Also Published As

Publication number Publication date
JP2598420B2 (en) 1997-04-09

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