JPS6452128A - Active device - Google Patents

Active device

Info

Publication number
JPS6452128A
JPS6452128A JP62209501A JP20950187A JPS6452128A JP S6452128 A JPS6452128 A JP S6452128A JP 62209501 A JP62209501 A JP 62209501A JP 20950187 A JP20950187 A JP 20950187A JP S6452128 A JPS6452128 A JP S6452128A
Authority
JP
Japan
Prior art keywords
poly
electrodes
active device
film thickness
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62209501A
Other languages
Japanese (ja)
Inventor
Takashi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62209501A priority Critical patent/JPS6452128A/en
Publication of JPS6452128A publication Critical patent/JPS6452128A/en
Pending legal-status Critical Current

Links

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To display picture elements with high quality by providing an active display picture element driving device with MOS diodes reversely in parallel. CONSTITUTION:Source electrodes 7 and drain electrodes 8 made of n<+> poly-Si, channel areas 9 made of nondoped poly-Si, gate insulating films 10 made of SiO2, and electrodes made of ITO are provided on an insulating substrate 6 to constitute an active device. At this time, the poly-Si MOS diodes of the source electrodes 7 are provided reversely in parallel. Consequently, a threshold voltage Vth is made proper by controlling the film thickness of the gate insulating films 10 and poly-Si film thickness. Thus, the Vth of the active device is made proper, so the liquid crystal can be driven effectively.
JP62209501A 1987-08-24 1987-08-24 Active device Pending JPS6452128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62209501A JPS6452128A (en) 1987-08-24 1987-08-24 Active device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62209501A JPS6452128A (en) 1987-08-24 1987-08-24 Active device

Publications (1)

Publication Number Publication Date
JPS6452128A true JPS6452128A (en) 1989-02-28

Family

ID=16573849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62209501A Pending JPS6452128A (en) 1987-08-24 1987-08-24 Active device

Country Status (1)

Country Link
JP (1) JPS6452128A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136125A (en) * 1987-11-24 1989-05-29 Fujitsu Ltd Active matrix type liquid crystal display device
JPH02244678A (en) * 1989-03-16 1990-09-28 Rohm Co Ltd Constant voltage diode
US5220443A (en) * 1991-04-29 1993-06-15 Nec Corporation Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection
JP2006520478A (en) * 2003-01-17 2006-09-07 ダイオード・ソリューションズ・インコーポレーテッド Display using organic materials
KR100731674B1 (en) * 2000-02-02 2007-06-22 코우프랜드코포레이션 Foot plate for hermetic shell
US8193594B2 (en) 2006-11-07 2012-06-05 Cbrite Inc. Two-terminal switching devices and their methods of fabrication
US8222077B2 (en) 2006-11-07 2012-07-17 Cbrite Inc. Metal-insulator-metal (MIM) devices and their methods of fabrication
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
JP2018107429A (en) * 2016-11-04 2018-07-05 ディーピーアイエックス リミテッド ライアビリティ カンパニー Electrostatic discharge (esd) protection for metal oxide medical device product

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136125A (en) * 1987-11-24 1989-05-29 Fujitsu Ltd Active matrix type liquid crystal display device
JPH02244678A (en) * 1989-03-16 1990-09-28 Rohm Co Ltd Constant voltage diode
US5220443A (en) * 1991-04-29 1993-06-15 Nec Corporation Matrix wiring substrate and active matrix display having non-linear resistance elements for electrostatic discharge protection
KR100731674B1 (en) * 2000-02-02 2007-06-22 코우프랜드코포레이션 Foot plate for hermetic shell
JP2006520478A (en) * 2003-01-17 2006-09-07 ダイオード・ソリューションズ・インコーポレーテッド Display using organic materials
US8253910B2 (en) 2003-01-17 2012-08-28 Cbrite Inc. Display employing organic material
US8193594B2 (en) 2006-11-07 2012-06-05 Cbrite Inc. Two-terminal switching devices and their methods of fabrication
US8222077B2 (en) 2006-11-07 2012-07-17 Cbrite Inc. Metal-insulator-metal (MIM) devices and their methods of fabrication
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
JP2018107429A (en) * 2016-11-04 2018-07-05 ディーピーアイエックス リミテッド ライアビリティ カンパニー Electrostatic discharge (esd) protection for metal oxide medical device product

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