JPS6457627A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6457627A
JPS6457627A JP21283887A JP21283887A JPS6457627A JP S6457627 A JPS6457627 A JP S6457627A JP 21283887 A JP21283887 A JP 21283887A JP 21283887 A JP21283887 A JP 21283887A JP S6457627 A JPS6457627 A JP S6457627A
Authority
JP
Japan
Prior art keywords
ion
substrate
implanted
oxide film
containing carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21283887A
Other languages
Japanese (ja)
Inventor
Kiyoshi Irino
Hiromi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21283887A priority Critical patent/JPS6457627A/en
Publication of JPS6457627A publication Critical patent/JPS6457627A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enable forming an oxide film with desired thickness on a semiconductor substrate without leaving defects on the substrate, by a method wherein the rate of oxidation of substrate surface is decreased by selectively implanting carbon ion or ion containing carbon in the surface of the semiconductor substrate. CONSTITUTION:By selectively implanting carbon ion or ion 13 containing carbon in the surface of a semiconductor substrate 11, the rate of oxidation of the substrate surface is decreased. For example, by patterning a mask material 12 on the silicon substrate 11, an element forming region is exposed. After the ions 13 containing carbon are implanted in the substrate 11, and the mask material 12 is eliminated, a thick oxide film 14 is formed, by oxidizing on the part convered by the mask material in which the ion containing carbon is not implanted, and a thin oxide film 15 is formed on the part in which the above ion is implanted. After that, B<+> ions 16 for forming a base region are implanted, which are activated by annealing, and a base region 17 is formed. Then a window 18 is made in the oxide film 15, and an emitter region 19 is formed by diffusing P<+>.
JP21283887A 1987-08-28 1987-08-28 Manufacture of semiconductor device Pending JPS6457627A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21283887A JPS6457627A (en) 1987-08-28 1987-08-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21283887A JPS6457627A (en) 1987-08-28 1987-08-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6457627A true JPS6457627A (en) 1989-03-03

Family

ID=16629184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21283887A Pending JPS6457627A (en) 1987-08-28 1987-08-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6457627A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158897A (en) * 1990-08-03 1992-10-27 Sharp Kabushiki Kaisha Method for the production of a semiconductor device by implanting fluorocarbon ions
JPH11121450A (en) * 1997-10-17 1999-04-30 Samsung Electron Co Ltd Method of forming double oxide film
JP2018170379A (en) * 2017-03-29 2018-11-01 国立研究開発法人産業技術総合研究所 Semiconductor device, solar cell, and method for manufacturing solar cell

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158897A (en) * 1990-08-03 1992-10-27 Sharp Kabushiki Kaisha Method for the production of a semiconductor device by implanting fluorocarbon ions
JPH11121450A (en) * 1997-10-17 1999-04-30 Samsung Electron Co Ltd Method of forming double oxide film
JP2018170379A (en) * 2017-03-29 2018-11-01 国立研究開発法人産業技術総合研究所 Semiconductor device, solar cell, and method for manufacturing solar cell

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