JPS6417425A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6417425A JPS6417425A JP17287287A JP17287287A JPS6417425A JP S6417425 A JPS6417425 A JP S6417425A JP 17287287 A JP17287287 A JP 17287287A JP 17287287 A JP17287287 A JP 17287287A JP S6417425 A JPS6417425 A JP S6417425A
- Authority
- JP
- Japan
- Prior art keywords
- film
- impurity
- dopant added
- dopant
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 6
- 238000000137 annealing Methods 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To form an impurity diffusion layer, which is high in impurity concentration and small in impurity depth, with good controllability, by forming a bilayer structure consisting of a film with a dopant added in its diffusion region and of a film with no dopant added there, and by performing an annealing process. CONSTITUTION:Bilayer structure, consisting of a film 5 with a dopant added in its diffusion region 4 of a semiconductor substrate 1 and of a film 6 with no dopant added there, is formed and next an annealing process is performed. Hence the dopant high in its vapor pressure can be prevented from diffusing into an atmosphere at the time of annealing. Consequently an impurity diffusion layer 4 high in impurity concentration and small in impurity depth can be secured in a short annealing time even if the film with the dopant added therein is made thin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17287287A JPS6417425A (en) | 1987-07-13 | 1987-07-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17287287A JPS6417425A (en) | 1987-07-13 | 1987-07-13 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6417425A true JPS6417425A (en) | 1989-01-20 |
Family
ID=15949868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17287287A Pending JPS6417425A (en) | 1987-07-13 | 1987-07-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6417425A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02208929A (en) * | 1989-02-08 | 1990-08-20 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2006310373A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
-
1987
- 1987-07-13 JP JP17287287A patent/JPS6417425A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02208929A (en) * | 1989-02-08 | 1990-08-20 | Rohm Co Ltd | Manufacture of semiconductor device |
| JP2006310373A (en) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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