JPS6457637U - - Google Patents
Info
- Publication number
- JPS6457637U JPS6457637U JP15023387U JP15023387U JPS6457637U JP S6457637 U JPS6457637 U JP S6457637U JP 15023387 U JP15023387 U JP 15023387U JP 15023387 U JP15023387 U JP 15023387U JP S6457637 U JPS6457637 U JP S6457637U
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- quartz tube
- substrate
- heat sink
- stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000003708 ampul Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案に係る結晶成長装置の断面図、
第２図Ａ及びＢは従来の結晶成長装置の断面図で
ある。
符号の説明、ａ……アンプル、１……石英管、
２……内部ヒートシンク、３……基板結晶、４…
…基板止め、５……溶着部、６……メルト。
FIG. 1 is a cross-sectional view of a crystal growth apparatus according to the present invention;
FIGS. 2A and 2B are cross-sectional views of a conventional crystal growth apparatus. Explanation of symbols, a... Ampoule, 1... Quartz tube,
2... Internal heat sink, 3... Substrate crystal, 4...
... Board fixing, 5... Welding part, 6... Melt.
Claims (1)
なる内部ヒートシンクを収納し、この内部ヒート
シンクの上面に基板結晶を当接させる態様で配置
し、この基板結晶を基板止めで保持し、この基板
止めの上端に位置する石英管の溶着部を軟化溶着
して基板結晶を固定した後前記石英管にメルトを
充填して高真空とした後前記石英管の開口部を閉
じて密封した構成とし、上下に温度差が形成され
た溶液により基板結晶上に結晶をエピタキシヤル
成長させることを特徴としてなる半導体結晶の結
晶成長装置。 An internal heat sink made of a rod-shaped material with high thermal conductivity is housed in a bottomed quartz tube, a substrate crystal is placed in contact with the top surface of the internal heat sink, and this substrate crystal is held with a substrate stopper. After softening and welding the welded part of the quartz tube located at the upper end of the stopper to fix the substrate crystal, the quartz tube is filled with melt and created a high vacuum, and then the opening of the quartz tube is closed and sealed, A semiconductor crystal crystal growth apparatus characterized by epitaxially growing a crystal on a substrate crystal using a solution in which a temperature difference is formed between the upper and lower sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15023387U JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15023387U JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6457637U true JPS6457637U (en) | 1989-04-10 |
| JPH034028Y2 JPH034028Y2 (en) | 1991-02-01 |
Family
ID=31423190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15023387U Expired JPH034028Y2 (en) | 1987-09-30 | 1987-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH034028Y2 (en) |
-
1987
- 1987-09-30 JP JP15023387U patent/JPH034028Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH034028Y2 (en) | 1991-02-01 |
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