JPS6457675A - Vertical field-effect transistor - Google Patents

Vertical field-effect transistor

Info

Publication number
JPS6457675A
JPS6457675A JP62214231A JP21423187A JPS6457675A JP S6457675 A JPS6457675 A JP S6457675A JP 62214231 A JP62214231 A JP 62214231A JP 21423187 A JP21423187 A JP 21423187A JP S6457675 A JPS6457675 A JP S6457675A
Authority
JP
Japan
Prior art keywords
regions
semiconductor substrate
base
conductivity type
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62214231A
Other languages
Japanese (ja)
Inventor
Masayuki Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62214231A priority Critical patent/JPS6457675A/en
Publication of JPS6457675A publication Critical patent/JPS6457675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE:To provide a low input capacity and high breakdown strength vertical FET with lower input capacity and lower on-resistance by a method wherein source regions are formed in base regions; gate electrodes are formed on the base regions between a semiconductor substrate and the source regions; and high concentration drain regions are formed on the surface around the base regions of the semiconductor substrate. CONSTITUTION:The title vertical FET is composed of the first conductivity type semiconductor substrate 7, the second conductivity type base regions 2 selectively provided on the surface part of semiconductor substrate 7 with each other, the first conductivity type source regions 3 provided on the base regions 2, gate electrodes 4 provided on the base region 2 between the source regions 3 and the semiconductor substrate 7 through the intermediary of a gate oxide and the first conductivity type impurity concentrated drain regions 9 on the surface part of semiconductor substrate 7 around said base regions 2. Furthermore, for example, an aluminum made source region 6 in contact with the central parts of the source regions 3 and the base region 2 is provided on interlayer insulating films 5 formed on the semiconductor substrate 7 provided with the gate electrodes 4 while a drain electrode 8 is provided on the rear side of the semiconductor substrate 7.
JP62214231A 1987-08-27 1987-08-27 Vertical field-effect transistor Pending JPS6457675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62214231A JPS6457675A (en) 1987-08-27 1987-08-27 Vertical field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62214231A JPS6457675A (en) 1987-08-27 1987-08-27 Vertical field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6457675A true JPS6457675A (en) 1989-03-03

Family

ID=16652359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62214231A Pending JPS6457675A (en) 1987-08-27 1987-08-27 Vertical field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6457675A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125972A (en) * 1990-09-17 1992-04-27 Fuji Electric Co Ltd Mos semiconductor element and manufacture thereof
JPH05267673A (en) * 1992-03-24 1993-10-15 Nec Kansai Ltd Vertical field effect transistor and manufacturing method thereof
JPH08125172A (en) * 1994-10-28 1996-05-17 Nec Yamagata Ltd Vertical field effect transistor and manufacturing method thereof
JP2003046082A (en) * 2001-05-25 2003-02-14 Toshiba Corp Semiconductor device and manufacturing method thereof
JP2006100779A (en) * 2004-09-02 2006-04-13 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof
WO2007091360A1 (en) * 2006-02-07 2007-08-16 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing same
JP2009071082A (en) * 2007-09-14 2009-04-02 Mitsubishi Electric Corp Semiconductor device
JP2010225878A (en) * 2009-03-24 2010-10-07 Denso Corp Semiconductor device provided with Schottky barrier diode and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103361A (en) * 1980-10-29 1982-06-26 Siemens Ag Mis controlled semiconductor element

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125972A (en) * 1990-09-17 1992-04-27 Fuji Electric Co Ltd Mos semiconductor element and manufacture thereof
JPH05267673A (en) * 1992-03-24 1993-10-15 Nec Kansai Ltd Vertical field effect transistor and manufacturing method thereof
JPH08125172A (en) * 1994-10-28 1996-05-17 Nec Yamagata Ltd Vertical field effect transistor and manufacturing method thereof
JP2003046082A (en) * 2001-05-25 2003-02-14 Toshiba Corp Semiconductor device and manufacturing method thereof
JP2006100779A (en) * 2004-09-02 2006-04-13 Fuji Electric Holdings Co Ltd Semiconductor device and manufacturing method thereof
WO2007091360A1 (en) * 2006-02-07 2007-08-16 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing same
JPWO2007091360A1 (en) * 2006-02-07 2009-07-02 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP2010045388A (en) * 2006-02-07 2010-02-25 Mitsubishi Electric Corp Silicon carbide semiconductor device
JP4545800B2 (en) * 2006-02-07 2010-09-15 三菱電機株式会社 Silicon carbide semiconductor device and manufacturing method thereof
US8222649B2 (en) 2006-02-07 2012-07-17 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing the same
JP2009071082A (en) * 2007-09-14 2009-04-02 Mitsubishi Electric Corp Semiconductor device
JP2010225878A (en) * 2009-03-24 2010-10-07 Denso Corp Semiconductor device provided with Schottky barrier diode and manufacturing method thereof

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