JPS6462015A - Drive circuit for mos-fet - Google Patents

Drive circuit for mos-fet

Info

Publication number
JPS6462015A
JPS6462015A JP62219506A JP21950687A JPS6462015A JP S6462015 A JPS6462015 A JP S6462015A JP 62219506 A JP62219506 A JP 62219506A JP 21950687 A JP21950687 A JP 21950687A JP S6462015 A JPS6462015 A JP S6462015A
Authority
JP
Japan
Prior art keywords
gate
base
state
mosfet1
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219506A
Other languages
Japanese (ja)
Inventor
Ryuichiro Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62219506A priority Critical patent/JPS6462015A/en
Publication of JPS6462015A publication Critical patent/JPS6462015A/en
Pending legal-status Critical Current

Links

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To make most of the merit of save-power drive by switching the emitter follower circuit into the cut-off state in interlocking with the ON-OFF of a gate drive signal. CONSTITUTION:An N-channel MOSFET1, a gate drive circuit 2, a PNP transistor(TR) 3 whose emitter and collector are connected respectively between the gate and source of the MOSFET1, and a base current supply resistor 4 connected between the collector and base of the TR 3 constitute an emitter follower circuit. Then a diode 5 connected between the base and emitter of the TR 3 switches the emitter follower circuit into the operating state or the cut-off state by using a gate drive signal from the base of the TR 3. Thus, the resistance between the gate and source of the MOSFET1 is kept to a low resistance in the OFF-state and the power consumption of the gate-drive circuit 2 is reduced. Thus, the merit of the power-saving drive is sufficiently utilized.
JP62219506A 1987-09-02 1987-09-02 Drive circuit for mos-fet Pending JPS6462015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219506A JPS6462015A (en) 1987-09-02 1987-09-02 Drive circuit for mos-fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219506A JPS6462015A (en) 1987-09-02 1987-09-02 Drive circuit for mos-fet

Publications (1)

Publication Number Publication Date
JPS6462015A true JPS6462015A (en) 1989-03-08

Family

ID=16736522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219506A Pending JPS6462015A (en) 1987-09-02 1987-09-02 Drive circuit for mos-fet

Country Status (1)

Country Link
JP (1) JPS6462015A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024492A (en) * 1999-07-08 2001-01-26 Toyota Autom Loom Works Ltd Drive circuit for mos transistor
US6804096B2 (en) 2001-07-27 2004-10-12 Denso Corporation Load driving circuit capable of raised accuracy detection of disconnection and short circuit of the load
JP2010136558A (en) * 2009-04-24 2010-06-17 Well Shin Technology Co Ltd Dc converter for vehicle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134547A (en) * 1978-04-11 1979-10-19 Sony Corp Mosfet switching circuit
JPS62172813A (en) * 1986-01-25 1987-07-29 Matsushita Electric Works Ltd Semiconductor relay circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134547A (en) * 1978-04-11 1979-10-19 Sony Corp Mosfet switching circuit
JPS62172813A (en) * 1986-01-25 1987-07-29 Matsushita Electric Works Ltd Semiconductor relay circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001024492A (en) * 1999-07-08 2001-01-26 Toyota Autom Loom Works Ltd Drive circuit for mos transistor
US6804096B2 (en) 2001-07-27 2004-10-12 Denso Corporation Load driving circuit capable of raised accuracy detection of disconnection and short circuit of the load
JP2010136558A (en) * 2009-04-24 2010-06-17 Well Shin Technology Co Ltd Dc converter for vehicle

Similar Documents

Publication Publication Date Title
GB2195506A (en) Cascode bimos driving circuit
EP0093447A3 (en) Magnetic deflection sweep amplifier with intelligent flyback
JPS6439821A (en) Logic circuit
JPS55105840A (en) Interface circuit
JPS54110748A (en) Driving method for microcomputer
JPS54109360A (en) Transistor switch circuit
JPS57188133A (en) Transistor relay circuit
JPS5593320A (en) Switching unit
EP1148626A3 (en) Switching power supply with regulated output voltage
JPS6417505A (en) Srpp system video output circuit
EP0147135A3 (en) Switching transistor arrangement
JPS5799037A (en) Logical circuit
JPS5753152A (en) Inverter circuit
JPS5724122A (en) Transistor driving circuit
MY126322A (en) Quickly restartable power supply apparatus
JPS5720022A (en) Transistor switching circuit
JPS6480104A (en) Oscillating circuit
JPS5779734A (en) Pulse signal controlling circuit
JPS6477320A (en) Charging pump circuit
JPS6447124A (en) Inverter circuit
JPS6429114A (en) Driving circuit for switching transistor
JPS554132A (en) Schmitt circuit
JPH04131043U (en) Illuminated non-contact switch circuit
JPS5665518A (en) Delay circuit
JPS6418309A (en) Bipolar transistor circuit