JPS6466971A - Floating gate tunnel oxide film type semiconductor memory element - Google Patents

Floating gate tunnel oxide film type semiconductor memory element

Info

Publication number
JPS6466971A
JPS6466971A JP22464387A JP22464387A JPS6466971A JP S6466971 A JPS6466971 A JP S6466971A JP 22464387 A JP22464387 A JP 22464387A JP 22464387 A JP22464387 A JP 22464387A JP S6466971 A JPS6466971 A JP S6466971A
Authority
JP
Japan
Prior art keywords
oxide film
drain region
tunnel oxide
type semiconductor
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22464387A
Other languages
Japanese (ja)
Inventor
Hajime Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22464387A priority Critical patent/JPS6466971A/en
Publication of JPS6466971A publication Critical patent/JPS6466971A/en
Pending legal-status Critical Current

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  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To improve the life for a writing/erasing cycle of a tunnel gate oxide film without reducing erasing speed, by arranging a drain region with low concentration as the base of the tunnel gate oxide film and adjacent to this region, providing a drain region with high concentration. CONSTITUTION:An N<+> type drain region 2-2 with high concentration and a source region 2a are formed on a P-type Si substrate 1 by selectively implanting ions of arsenic by a dosage of 1X10<15>-1X10<16>/cm<2> and then a drain region 2-1 with low concentration is formed with arsenic by a dosage of approximately 1X10<12>-1X10<14>/cm<2> as a base of a tunnel oxide film 6. The life of the tunnel oxide film is improved by the drain region with low concentration and erasing speed does not slow down because electrons are supplied by the drain region with high concentration.
JP22464387A 1987-09-07 1987-09-07 Floating gate tunnel oxide film type semiconductor memory element Pending JPS6466971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22464387A JPS6466971A (en) 1987-09-07 1987-09-07 Floating gate tunnel oxide film type semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22464387A JPS6466971A (en) 1987-09-07 1987-09-07 Floating gate tunnel oxide film type semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS6466971A true JPS6466971A (en) 1989-03-13

Family

ID=16816931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22464387A Pending JPS6466971A (en) 1987-09-07 1987-09-07 Floating gate tunnel oxide film type semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS6466971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160058A (en) * 1987-12-16 1989-06-22 Seiko Instr & Electron Ltd Semiconductor nonvolatile memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961187A (en) * 1982-09-30 1984-04-07 Toshiba Corp Nonvolatile semiconductor memory storage
JPS63199464A (en) * 1987-02-16 1988-08-17 Nippon Denso Co Ltd Non-volatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961187A (en) * 1982-09-30 1984-04-07 Toshiba Corp Nonvolatile semiconductor memory storage
JPS63199464A (en) * 1987-02-16 1988-08-17 Nippon Denso Co Ltd Non-volatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01160058A (en) * 1987-12-16 1989-06-22 Seiko Instr & Electron Ltd Semiconductor nonvolatile memory

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