JPS6467936A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a semiconductor layer having high thickness accuracy of the layer, no remaining damage to its semiconductor main surface and high breakdown strength by forming a silicon oxide layer in a silicon substrate, and epitaxially growing one conductivity type silicon layer thereon adjacently. CONSTITUTION:After oxygen ions are implanted to a P-type silicon substrate 1 to form a silicon oxide layer 2 as a protective layer, a single crystalline silicon layer is formed by annealing on the surface, and a buried oxide film 3 is formed under the layer. Then, the layer 2 on the surface is removed, and an N<+> type epitaxially grown layer 4 is formed. Then, high concentration arsenic ions are implanted, the surface is well cleaned, and an N<-> type silicon layer 5 is grown. Thereafter, a step of processing a semiconductor is conducted to obtain a silicon island isolated by the same dielectric as that of a silicon island of a conventional insulating layer state. Since the semiconductor layer is epitaxially grown in this manner, the surface of the silicon layer is not polished and not accordingly damaged. Further, the thickness of the film is formed constantly.