JPS5687355A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5687355A
JPS5687355A JP16514479A JP16514479A JPS5687355A JP S5687355 A JPS5687355 A JP S5687355A JP 16514479 A JP16514479 A JP 16514479A JP 16514479 A JP16514479 A JP 16514479A JP S5687355 A JPS5687355 A JP S5687355A
Authority
JP
Japan
Prior art keywords
region
type
layer
island
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16514479A
Other languages
Japanese (ja)
Inventor
Masanori Koshobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP16514479A priority Critical patent/JPS5687355A/en
Publication of JPS5687355A publication Critical patent/JPS5687355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To elevate the integration of the semiconductor device without increasing the manufacturing processes by a method wherein an impurity region to be used as a resistance layer or an interconnection layer to be formed in an island region being separated by a P-N junction, is made to be the region provided at the same time with the formation of a isolation region. CONSTITUTION:For example, an N<+> type region 11 and a surrounding P<+> type region 12 are provided selectively on a P type substrate 10, and an N<-> type epitaxial layer 13 is formed on the whole surface of the substrate. The P<+> type isolation region 12a is formed connecting with the previously formed P<+> type region 12 to form the island region 13a. At this time, the P<+> type region 14 is formed simultaneously in the island region. This P<+> type region 14 is used as it is as the low resistance layer or as the crossover interconnection layer. Accordingly the resistance layer or the interconnection layer can be provided without increasing the manufacturing process, and the integration can be elevated.
JP16514479A 1979-12-19 1979-12-19 Semiconductor device Pending JPS5687355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16514479A JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16514479A JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687355A true JPS5687355A (en) 1981-07-15

Family

ID=15806718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16514479A Pending JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305536A (en) * 1988-06-03 1989-12-08 Fuji Electric Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305536A (en) * 1988-06-03 1989-12-08 Fuji Electric Co Ltd Semiconductor integrated circuit device

Similar Documents

Publication Publication Date Title
JPS5687355A (en) Semiconductor device
JPS5660054A (en) Semiconductor integrated circuit
JPS5619653A (en) Bipolar cmos semiconductor device and manufacture thereof
JPS5420678A (en) Production of silicon monocrystaline island regions
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS5586182A (en) Manufacture of semiconductor device
JPS55102263A (en) Semiconductor integrated circuit
JPS54127689A (en) Semiconductor integrated circuit
JPS5443683A (en) Production of transistor
JPS6445159A (en) Semiconductor device
JPS5655060A (en) Semiconductor integrated circuit device
JPS5310286A (en) Production of semiconductor device
JPS6425566A (en) Manufacture of semiconductor integrated circuit
JPS5244163A (en) Process for productin of semiconductor element
JPS6467936A (en) Manufacture of semiconductor device
JPS5666067A (en) Semiconductor device and its manufacture
JPS5610925A (en) Preparation of semiconductor device
JPS5568650A (en) Manufacturing method of semiconductor device
JPS55146964A (en) Manufacture of semiconductor device
JPS5637622A (en) Manufacture of semiconductor device
JPS5491079A (en) Manufacture of semiconductor device
JPS57188860A (en) Semiconductor device
JPS54158876A (en) Manufacture of semiconductor device
JPS55105343A (en) Manufacturing method of semiconductor device
JPS51117882A (en) Semiconductor device manufacturing method