JPS6467964A - Multilayer electrode structure - Google Patents

Multilayer electrode structure

Info

Publication number
JPS6467964A
JPS6467964A JP62225038A JP22503887A JPS6467964A JP S6467964 A JPS6467964 A JP S6467964A JP 62225038 A JP62225038 A JP 62225038A JP 22503887 A JP22503887 A JP 22503887A JP S6467964 A JPS6467964 A JP S6467964A
Authority
JP
Japan
Prior art keywords
layer
multilayer electrode
heat resistance
barrier metal
sufficient heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225038A
Other languages
Japanese (ja)
Inventor
Shinichi Sakamoto
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62225038A priority Critical patent/JPS6467964A/en
Priority to FR888811735A priority patent/FR2620270B1/en
Publication of JPS6467964A publication Critical patent/JPS6467964A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/877—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET] having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Wire Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a multilayer electrode having a sufficient heat resistance and a strong bonding strength by laminating a high melting point barrier metal layer formed of one of Mo and W on a first Ti layer. CONSTITUTION:A high-melting-point barrier metal layer 4 is formed of one of Mo and W, and an another Ti layer 8 is newly provided between the layer 4 and an electrode layer 5. Since the layer 4 prevents the Ga of an N-type GaAs layer 2 from diffusing outside, sufficient heat resistance is obtained. The layer 4 is bonded through a second Ti layer 8 to the layer 5, its bonding strength is larger than the case that the layer 4 is directly bonded to the layer 5, and malfunctions, such as an exfoliation at the time of wire bonding can be reduced.
JP62225038A 1987-09-08 1987-09-08 Multilayer electrode structure Pending JPS6467964A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62225038A JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure
FR888811735A FR2620270B1 (en) 1987-09-08 1988-09-08 MULTI-LAYER ELECTRODE STRUCTURE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225038A JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure

Publications (1)

Publication Number Publication Date
JPS6467964A true JPS6467964A (en) 1989-03-14

Family

ID=16823077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225038A Pending JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure

Country Status (2)

Country Link
JP (1) JPS6467964A (en)
FR (1) FR2620270B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522325A (en) * 2011-11-15 2012-06-27 北京时代民芯科技有限公司 Production method for submicron multilayer metallic electrode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460531A1 (en) * 1990-06-07 1991-12-11 Siemens Aktiengesellschaft Contact metallisation on semiconductor material
WO1998025310A1 (en) * 1996-12-06 1998-06-11 Raytheon Ti Systems, Inc. GATE ELECTRODE FOR GaAs FET
FR2914500B1 (en) 2007-03-30 2009-11-20 Picogiga Internat IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176025D1 (en) * 1980-08-04 1987-04-23 Santa Barbara Res Center Metallic contacts to compound semiconductor devices
JPS57177565A (en) * 1981-04-24 1982-11-01 Nec Corp Multi-layer electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522325A (en) * 2011-11-15 2012-06-27 北京时代民芯科技有限公司 Production method for submicron multilayer metallic electrode

Also Published As

Publication number Publication date
FR2620270A1 (en) 1989-03-10
FR2620270B1 (en) 1992-02-28

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