JPS6467972A - Power mosfet - Google Patents

Power mosfet

Info

Publication number
JPS6467972A
JPS6467972A JP62224063A JP22406387A JPS6467972A JP S6467972 A JPS6467972 A JP S6467972A JP 62224063 A JP62224063 A JP 62224063A JP 22406387 A JP22406387 A JP 22406387A JP S6467972 A JPS6467972 A JP S6467972A
Authority
JP
Japan
Prior art keywords
region
base
concentration
same process
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62224063A
Other languages
Japanese (ja)
Other versions
JP2668887B2 (en
Inventor
Teruyoshi Mihara
Yukio Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62224063A priority Critical patent/JP2668887B2/en
Priority to US07/209,237 priority patent/US4893158A/en
Priority to DE3821065A priority patent/DE3821065C3/en
Publication of JPS6467972A publication Critical patent/JPS6467972A/en
Application granted granted Critical
Publication of JP2668887B2 publication Critical patent/JP2668887B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/669—Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To avoid an element breakdown due to a parasitic transistor even if the number of elements is reduced by forming a bipolar transistor formed in the same substrate as that of a power MOSFET as a lateral transistor in which a second base region having a reduce concentration by a collector region in a short base width is employed as a substantial base and in a 2-layer base structure made of a high concentration first base region and a second base region having a low concentration and a high depth. CONSTITUTION:A second base region 21 formed in the same process as that of p<+> type body regions 5 of high concentration M1 and M2 and an emitter region 22 formed in the same process as that of an n<+> type source region 4 are provided in a first base region 20 formed in the same process as that of the p-type body region 3 of a vertical power MOSFET (main MOSFET.M1 and current mirror MOSFET.M2). A parasitic bipolar transistor T4 designated by a broken line is formed in a vertical direction, but since the base width of the T4 is considerably layer than that of a bipolar transistor T1 and the concentration of the region 21 is high, it can be so formed as to ignore its hFE. Accordingly, it can prevent a malfunction due to a parasitic bipolar effect.
JP62224063A 1987-06-22 1987-09-09 Power MOSFET and method of manufacturing the same Expired - Fee Related JP2668887B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62224063A JP2668887B2 (en) 1987-09-09 1987-09-09 Power MOSFET and method of manufacturing the same
US07/209,237 US4893158A (en) 1987-06-22 1988-06-20 MOSFET device
DE3821065A DE3821065C3 (en) 1987-06-22 1988-06-22 Integrated circuit with a power MOSFET and an overload protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62224063A JP2668887B2 (en) 1987-09-09 1987-09-09 Power MOSFET and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS6467972A true JPS6467972A (en) 1989-03-14
JP2668887B2 JP2668887B2 (en) 1997-10-27

Family

ID=16807988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62224063A Expired - Fee Related JP2668887B2 (en) 1987-06-22 1987-09-09 Power MOSFET and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2668887B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012201A (en) * 2000-04-28 2002-01-15 Autonics Co Ltd Fluid material dispensing apparatus, food dispensing apparatus and soft ice cream dispensing apparatus
JP2007242923A (en) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd Electrostatic protection element of semiconductor integrated circuit
JP2008112890A (en) * 2006-10-31 2008-05-15 Renesas Technology Corp Semiconductor device and manufacturing method thereof
JP2009224667A (en) * 2008-03-18 2009-10-01 Fujitsu Telecom Networks Ltd Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor
CN104641557A (en) * 2012-12-17 2015-05-20 富士电机株式会社 Semiconductor device and current detection circuit using said semiconductor device
JP2016201693A (en) * 2015-04-10 2016-12-01 シャープ株式会社 Semiconductor device
WO2022054546A1 (en) * 2020-09-10 2022-03-17 オムロン株式会社 Overcurrent protection circuit and power converter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123755A (en) * 1982-01-19 1983-07-23 Toshiba Corp Semiconductor device
JPS58222555A (en) * 1982-06-18 1983-12-24 Nissan Motor Co Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123755A (en) * 1982-01-19 1983-07-23 Toshiba Corp Semiconductor device
JPS58222555A (en) * 1982-06-18 1983-12-24 Nissan Motor Co Ltd Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002012201A (en) * 2000-04-28 2002-01-15 Autonics Co Ltd Fluid material dispensing apparatus, food dispensing apparatus and soft ice cream dispensing apparatus
JP2007242923A (en) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd Electrostatic protection element of semiconductor integrated circuit
JP2008112890A (en) * 2006-10-31 2008-05-15 Renesas Technology Corp Semiconductor device and manufacturing method thereof
JP2009224667A (en) * 2008-03-18 2009-10-01 Fujitsu Telecom Networks Ltd Field effect transistor, semiconductor device, control circuit, control method therefor, and insulated gate bipolar transistor
CN104641557A (en) * 2012-12-17 2015-05-20 富士电机株式会社 Semiconductor device and current detection circuit using said semiconductor device
JP2016201693A (en) * 2015-04-10 2016-12-01 シャープ株式会社 Semiconductor device
WO2022054546A1 (en) * 2020-09-10 2022-03-17 オムロン株式会社 Overcurrent protection circuit and power converter
US12272941B2 (en) 2020-09-10 2025-04-08 Omron Corporation Overcurrent protection circuit and power converter

Also Published As

Publication number Publication date
JP2668887B2 (en) 1997-10-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees