JPS646855A - Production of moisture sensitive element - Google Patents
Production of moisture sensitive elementInfo
- Publication number
- JPS646855A JPS646855A JP16333487A JP16333487A JPS646855A JP S646855 A JPS646855 A JP S646855A JP 16333487 A JP16333487 A JP 16333487A JP 16333487 A JP16333487 A JP 16333487A JP S646855 A JPS646855 A JP S646855A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon nitride
- moisture sensitive
- films
- boundary lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 3
- 230000002209 hydrophobic effect Effects 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
PURPOSE:To prevent the generation of damages in the parts of moisture sensitive films and substrate, etc., at the time of dividing the substrate by forming silicon nitride films having the weak adhesion to a hydrophobic org. material to be formed as the moisture sensitive films at a required width to the parts of the dividing boundary lines on the substrate. CONSTITUTION:The silicon nitride film 3 is deposited to a required thickness on the substrate 1 and a mask is brought into tight contact with the surface thereof. The patterns of the prescribed width including the boundary lines 2 are formed on the substrate 1 when the silicon nitride film 3 except the patterns is removed by an RIE method and the mask is removed. The hydrophobic org. material is then stuck to element forming regions 5 and is subjected to heating and photoirradiation to induce crystallization and copolymn. reaction, by which the org. material is cured and the moisture sensitive films 6 are formed to the parts except the silicon nitride films 3. Blades of a dicer are pressed to the substrate along the boundary lines 2 from above the silicon nitride films 3 of the prescribed width, by which the substrate 1 is divided and the chips of moisture sensitive elements are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16333487A JPS646855A (en) | 1987-06-30 | 1987-06-30 | Production of moisture sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16333487A JPS646855A (en) | 1987-06-30 | 1987-06-30 | Production of moisture sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS646855A true JPS646855A (en) | 1989-01-11 |
Family
ID=15771885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16333487A Pending JPS646855A (en) | 1987-06-30 | 1987-06-30 | Production of moisture sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS646855A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112010005649T5 (en) | 2010-06-08 | 2013-11-28 | Hitachi, Ltd. | Isolation transformer and power source |
-
1987
- 1987-06-30 JP JP16333487A patent/JPS646855A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112010005649T5 (en) | 2010-06-08 | 2013-11-28 | Hitachi, Ltd. | Isolation transformer and power source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5534442A (en) | Preparation of semiconductor device | |
| JPS53146300A (en) | Production of silicon carbide substrate | |
| JPS5258469A (en) | Resin-molded type semiconductor device | |
| JPS5243385A (en) | Process for production of semiconductor integrated circuit | |
| JPS54113253A (en) | Bonding method of semiconductor pellet | |
| JPS5710933A (en) | Abrasive method for back of substrate of semiconductor device | |
| JPS57128950A (en) | Manufacture ot of thin film element | |
| JPS5570027A (en) | Manufacture of semicondcutor device | |
| JPS5541261A (en) | Method of continuously manufacturing heat insulating foundation material and its device | |
| JPS5541286A (en) | Adhesion method | |
| JPS5766651A (en) | Manufacture of semiconductor device | |
| JPS55162242A (en) | Semiconductor-wafer-pasted substrate | |
| JPS5775447A (en) | Semiconductor device | |
| JPS5797629A (en) | Manufacture of semiconductor device | |
| JPS57133641A (en) | Manufacture of semiconductor device | |
| JPS5753120A (en) | Production of adhesive substrate for precise lapping of thin material | |
| JPS5575221A (en) | Manufacturing semiconductor | |
| JPS5678122A (en) | Formation of pattern | |
| JPS5550637A (en) | Division method of wafer provided with semiconductor device | |
| JPS6441220A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5483771A (en) | Manufacture of semiconductor device | |
| JPS5630732A (en) | Mounting method of semiconductor pellet | |
| JPS54113277A (en) | Production of semiconductor device | |
| JPS56148838A (en) | Mounting method for ic | |
| JPS6428827A (en) | Manufacture of semiconductor device |