JPS6468923A - Annealing of single crystal substrate of inorganic compound - Google Patents

Annealing of single crystal substrate of inorganic compound

Info

Publication number
JPS6468923A
JPS6468923A JP22574687A JP22574687A JPS6468923A JP S6468923 A JPS6468923 A JP S6468923A JP 22574687 A JP22574687 A JP 22574687A JP 22574687 A JP22574687 A JP 22574687A JP S6468923 A JPS6468923 A JP S6468923A
Authority
JP
Japan
Prior art keywords
substrate
annealing
heating means
cooling speed
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22574687A
Other languages
Japanese (ja)
Other versions
JP2516641B2 (en
Inventor
Toshihiko Ibuka
Yutaka Yamada
Fumio Orito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Kasei Corp
Mitsubishi Monsanto Chemical Co
Mitsubishi Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp, Mitsubishi Monsanto Chemical Co, Mitsubishi Chemical Industries Ltd filed Critical Mitsubishi Kasei Corp
Priority to JP62225746A priority Critical patent/JP2516641B2/en
Priority to KR1019880000595A priority patent/KR880009419A/en
Publication of JPS6468923A publication Critical patent/JPS6468923A/en
Priority to US07/463,642 priority patent/US5051376A/en
Application granted granted Critical
Publication of JP2516641B2 publication Critical patent/JP2516641B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To provide high resistivity for a substrate after annealing, by implanting conductive ions into the single crystal substrate of III-V compound, and specifying the cooling speed of the substrate after annealing. CONSTITUTION:The temperature of a substrate after ion implantation is held at about 800-1,000 deg.C for about 2 seconds-15 minutes. Thereafter the substrate is cooled at a cooling speed of 0.29 deg.C/sec-90 deg.C/sec until the temperature of the substrate becomes 600 deg.C. As a heating means used for annealing, a device having a small heat capacity is desirable. As such a heating means, there are the following devices: an incoherent light source such as an infrared-ray lamp; a so-called gold furnace, in which resistor wire is wound around a quartz core tube, the tube is arranged in a quartz tube and heat is insulated; and the like. The cooling speed is controlled by adjusting the heating power of the heating means, e.g., the gold furnace, the infrared-ray lamp and the like.
JP62225746A 1987-01-26 1987-09-09 Annealing method for inorganic compound single crystal substrate Expired - Fee Related JP2516641B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62225746A JP2516641B2 (en) 1987-09-09 1987-09-09 Annealing method for inorganic compound single crystal substrate
KR1019880000595A KR880009419A (en) 1987-01-26 1988-01-26 Manufacturing method of semiconductor device and semiconductor device manufactured by the method
US07/463,642 US5051376A (en) 1987-01-26 1990-01-11 Method for producing semiconductor device and semiconductor device produced thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225746A JP2516641B2 (en) 1987-09-09 1987-09-09 Annealing method for inorganic compound single crystal substrate

Publications (2)

Publication Number Publication Date
JPS6468923A true JPS6468923A (en) 1989-03-15
JP2516641B2 JP2516641B2 (en) 1996-07-24

Family

ID=16834187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225746A Expired - Fee Related JP2516641B2 (en) 1987-01-26 1987-09-09 Annealing method for inorganic compound single crystal substrate

Country Status (1)

Country Link
JP (1) JP2516641B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586119A (en) * 1981-07-03 1983-01-13 Nec Corp Annealing of compound semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586119A (en) * 1981-07-03 1983-01-13 Nec Corp Annealing of compound semiconductor

Also Published As

Publication number Publication date
JP2516641B2 (en) 1996-07-24

Similar Documents

Publication Publication Date Title
IE802151L (en) Semiconductors
TW345705B (en) Laser processing method
DE3171974D1 (en) Low temperature annealing of semiconductor devices
JPS58223320A (en) Diffusing method for impurity
JPS5975670A (en) Method for manufacturing thin film semiconductor devices
US4543472A (en) Plane light source unit and radiant heating furnace including same
JPS5749248A (en) Substrate heating and retaining device
JPS6444023A (en) Heat treatment
GB1005770A (en) Improvements in or relating to electroluminescent cells
JPS55124237A (en) Semiconductor treatment device
Gelpey et al. Rapid annealing using the water-wall arc lamp
JPS5794531A (en) Continuous annealing equipment for wire rod
JPS6428809A (en) Laser annealing device
RU2069414C1 (en) Method for doping silicon with chalcogens
EP0297707A3 (en) Superconductive electric wire and method for making it
JPS57124426A (en) Annealing method for ion implanted silicon
JPH01114032A (en) Heat treating device
JPS57164504A (en) Superconductive coil device
JPS6454725A (en) Heat treating method for compound semiconductor substrate
JPS5877220A (en) Annealing device for iron core in magnetic field
JPS6427232A (en) Manufacture of semiconductor substrate
JPS5550544A (en) Method for manufacturing tungsten filament
JPS5512740A (en) Ion-injected semiconductor base plate annealing method
JPS56157021A (en) Heat-treatment furnace for semiconductor
GB827676A (en) Method and apparatus for heat treating semi-conductor material

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees