JPS6468947A - Formation of aluminum wiring - Google Patents
Formation of aluminum wiringInfo
- Publication number
- JPS6468947A JPS6468947A JP22741487A JP22741487A JPS6468947A JP S6468947 A JPS6468947 A JP S6468947A JP 22741487 A JP22741487 A JP 22741487A JP 22741487 A JP22741487 A JP 22741487A JP S6468947 A JPS6468947 A JP S6468947A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- aluminum wiring
- oxide film
- film
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract 10
- 229910052782 aluminium Inorganic materials 0.000 title abstract 10
- 230000015572 biosynthetic process Effects 0.000 title 1
- 230000035939 shock Effects 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 230000006735 deficit Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- -1 Hydrogen ions Chemical class 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor integrated circuit without the occurrence of any partial deficit of an aluminum wiring. by forming the aluminum wiring of an aluminum layer by using a chemical etching method, thereafter, depositing an insulating film thereon, and imparting shocks to the insulating film by a sputtering method and the like using gas. CONSTITUTION:An oxide film 12 is grown on a silicon substrate 11. An aluminum layer 13 is deposited thereon. The aluminum layer is patterned, and an aluminum wiring 14 is formed. An oxide film 15 is grown by 1mum by a CVD method. Then ion shock is imparted on the oxide film 15 by argon sputtering, and the film is etched away by 0.1mum. Hydrogen ions in the aluminum wiring are discharged out of the aluminum by the shock energy. The ions are further discharged into outer air through the oxide film. When this integrated circuit is sealed with a resin, any partial deficit of the aluminum wiring does not occur at all.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22741487A JPS6468947A (en) | 1987-09-09 | 1987-09-09 | Formation of aluminum wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22741487A JPS6468947A (en) | 1987-09-09 | 1987-09-09 | Formation of aluminum wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6468947A true JPS6468947A (en) | 1989-03-15 |
Family
ID=16860469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22741487A Pending JPS6468947A (en) | 1987-09-09 | 1987-09-09 | Formation of aluminum wiring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6468947A (en) |
-
1987
- 1987-09-09 JP JP22741487A patent/JPS6468947A/en active Pending
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