JPS6468979A - Formation of light emitting device using gaalas wafer - Google Patents
Formation of light emitting device using gaalas waferInfo
- Publication number
- JPS6468979A JPS6468979A JP22594187A JP22594187A JPS6468979A JP S6468979 A JPS6468979 A JP S6468979A JP 22594187 A JP22594187 A JP 22594187A JP 22594187 A JP22594187 A JP 22594187A JP S6468979 A JPS6468979 A JP S6468979A
- Authority
- JP
- Japan
- Prior art keywords
- gaalas
- substrate
- layer
- gaalas layer
- electrode layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To eliminate any excessive impurity dopant by a method wherein, after growing a GaAlAs layer on a substrate, the substrate is removed to form an active layer further forming electrode layers on the opposite side surfaces. CONSTITUTION:A GaAlAs layer 2 is grown on a GaAs substrate 1 by liquid epitaxial process. The substrate 1 is removed to expose the GaAlAs layer 2 for finishing an exposed surface 4 as a mirror surface. Next, PN junction layers 5 are grown on the exposed surface by liquid epitaxial process. Thus, electrode layers 6, 7 as light emitters are formed respectively on the end surface of GaAlAs layer 2 and the surface of PN junction layer 5. Through these procedures, the electrode layers 6, 7 can be formed on the growing end surface sides of the GaAlAs layer 2 to assure the excellent electrode characteristics using less impurity dopant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22594187A JPS6468979A (en) | 1987-09-09 | 1987-09-09 | Formation of light emitting device using gaalas wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22594187A JPS6468979A (en) | 1987-09-09 | 1987-09-09 | Formation of light emitting device using gaalas wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6468979A true JPS6468979A (en) | 1989-03-15 |
Family
ID=16837296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22594187A Pending JPS6468979A (en) | 1987-09-09 | 1987-09-09 | Formation of light emitting device using gaalas wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6468979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5848557A (en) * | 1995-08-29 | 1998-12-15 | Aisin Seiki Kabushiki Kaisha | Driving device for tilting steering equipment |
-
1987
- 1987-09-09 JP JP22594187A patent/JPS6468979A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5848557A (en) * | 1995-08-29 | 1998-12-15 | Aisin Seiki Kabushiki Kaisha | Driving device for tilting steering equipment |
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