JPS64730A - Formation of multilayer thin-film - Google Patents

Formation of multilayer thin-film

Info

Publication number
JPS64730A
JPS64730A JP3028788A JP3028788A JPS64730A JP S64730 A JPS64730 A JP S64730A JP 3028788 A JP3028788 A JP 3028788A JP 3028788 A JP3028788 A JP 3028788A JP S64730 A JPS64730 A JP S64730A
Authority
JP
Japan
Prior art keywords
plasma
film
thin
mixed gas
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3028788A
Other languages
Japanese (ja)
Other versions
JPH01730A (en
JP2629773B2 (en
Inventor
Hideomi Koinuma
Kazuo Fueki
Masashi Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bridgestone Corp
Original Assignee
Bridgestone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgestone Corp filed Critical Bridgestone Corp
Priority to JP63030287A priority Critical patent/JP2629773B2/en
Publication of JPH01730A publication Critical patent/JPH01730A/en
Publication of JPS64730A publication Critical patent/JPS64730A/en
Application granted granted Critical
Publication of JP2629773B2 publication Critical patent/JP2629773B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE: To supply a mixed gas continuously, to form a multilayer thin-film efficiently, simply and positively and to reduce cost without complicating even a device by utilizing a plasma excitation chemical reaction and an optical pumping chemical reaction and selecting the mixed gas and a reaction mode.
CONSTITUTION: A high-frequency pulse oscillator (13.56MHz) 8 positioned outside a reactor 1 and ON-OFF controlled by a computer is disposed (an inductive coupling type), and plasma is formed in plasma forming space 2a by turning said oscillator 8 ON while a low pressure mercury lamp 10 being brought to an ON state at all times during a thin-film forming period and applying beams is arranged to the upper section of said plasma forming space 2a through a synthetic quartz window 9. When the mixed gas of Si2H6 and CF4 is used, only Si2H6 is decomposed by beams on the OFF state of plasma, and a thin-film consisting of Si and H is shaped, and both Si2H6 and CF4 are excited on the ON state of plasma, and a thin-film composed of Si, C, H and F is formed.
COPYRIGHT: (C)1989,JPO&Japio
JP63030287A 1987-02-12 1988-02-12 Method of forming multilayer thin film Expired - Fee Related JP2629773B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63030287A JP2629773B2 (en) 1987-02-12 1988-02-12 Method of forming multilayer thin film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3079987 1987-02-12
JP62-30799 1987-02-12
JP63030287A JP2629773B2 (en) 1987-02-12 1988-02-12 Method of forming multilayer thin film

Publications (3)

Publication Number Publication Date
JPH01730A JPH01730A (en) 1989-01-05
JPS64730A true JPS64730A (en) 1989-01-05
JP2629773B2 JP2629773B2 (en) 1997-07-16

Family

ID=26368613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63030287A Expired - Fee Related JP2629773B2 (en) 1987-02-12 1988-02-12 Method of forming multilayer thin film

Country Status (1)

Country Link
JP (1) JP2629773B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107459A (en) * 1989-09-22 1991-05-07 Agency Of Ind Science & Technol Production of thin film of amorphous silicon and device therefor
US6380612B1 (en) 1996-03-18 2002-04-30 Hyundai Display Technology, Inc. Thin film formed by inductively coupled plasma

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214619A (en) * 1986-03-14 1987-09-21 Sumitomo Electric Ind Ltd Multilayer thin film manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62214619A (en) * 1986-03-14 1987-09-21 Sumitomo Electric Ind Ltd Multilayer thin film manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03107459A (en) * 1989-09-22 1991-05-07 Agency Of Ind Science & Technol Production of thin film of amorphous silicon and device therefor
US6380612B1 (en) 1996-03-18 2002-04-30 Hyundai Display Technology, Inc. Thin film formed by inductively coupled plasma
KR100469134B1 (en) * 1996-03-18 2005-09-02 비오이 하이디스 테크놀로지 주식회사 Inductive plasma chemical vapor deposition method and amorphous silicon thin film transistor produced using the same

Also Published As

Publication number Publication date
JP2629773B2 (en) 1997-07-16

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