JPS64731A - Forming device for deposited film - Google Patents
Forming device for deposited filmInfo
- Publication number
- JPS64731A JPS64731A JP63038728A JP3872888A JPS64731A JP S64731 A JPS64731 A JP S64731A JP 63038728 A JP63038728 A JP 63038728A JP 3872888 A JP3872888 A JP 3872888A JP S64731 A JPS64731 A JP S64731A
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- gas
- halogen
- base
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 abstract 7
- 239000007789 gas Substances 0.000 abstract 5
- 229910052736 halogen Inorganic materials 0.000 abstract 3
- 150000002367 halogens Chemical class 0.000 abstract 3
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 150000002431 hydrogen Chemical class 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 230000007246 mechanism Effects 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910004016 SiF2 Inorganic materials 0.000 abstract 1
- 230000003197 catalytic effect Effects 0.000 abstract 1
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 208000018459 dissociative disease Diseases 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To enable mass production by a low-cost device while keeping uniformity by arranging a heating element exciting a raw material gas for forming a deposit film into a film formation chamber and disposing a plurality of base body holding means capable of turning or sliding a base body around the heating element.
CONSTITUTION: When the gas of a compound containing silicon and halogen is passed onto a heating element 103 consisting of a tungsten filament, the gas is activated by a thermal dissociation reaction, and a precursor such as SiF2 is formed. When hydrogen gas introduced together with the gas of the compound containing silicon and halogen is passed similarly onto the heating element 103 composed of the tungsten filament, halogen gas is activated by the catalytic action of the heating element, and changed into active hydrogen, etc., and these active hydrogen, etc. are reacted with the precursor, thus shaping desired deposit films onto two pairs of base bodies disposed to the upper and lower sections of the heating element 103. The base bodies made of stainless wheels in 30cm width, 5m length and 0.2mm thickness are placed to delivery mechanisms 109 and winding mechanisms 110, and the inside of a film formation chamber 101 is decompressed to 10-6Torr while base-body heating bases 104 are heated at 250°C.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-38728A JPH01731A (en) | 1987-03-06 | 1988-02-23 | Deposited film forming equipment |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5034387 | 1987-03-06 | ||
| JP62-50343 | 1987-03-06 | ||
| JP63-38728A JPH01731A (en) | 1987-03-06 | 1988-02-23 | Deposited film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS64731A true JPS64731A (en) | 1989-01-05 |
| JPH01731A JPH01731A (en) | 1989-01-05 |
Family
ID=
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410454B1 (en) | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410454B1 (en) | 1997-06-10 | 2002-06-25 | Mitsubishi Denki Kabushiki | Method and apparatus for removing contaminants from the surface of a semiconductor wafer |
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