JPS6473774A - Pin photodiode of ingaas/inp - Google Patents

Pin photodiode of ingaas/inp

Info

Publication number
JPS6473774A
JPS6473774A JP62231423A JP23142387A JPS6473774A JP S6473774 A JPS6473774 A JP S6473774A JP 62231423 A JP62231423 A JP 62231423A JP 23142387 A JP23142387 A JP 23142387A JP S6473774 A JPS6473774 A JP S6473774A
Authority
JP
Japan
Prior art keywords
layer
electrode
ingaas
inp
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62231423A
Other languages
English (en)
Inventor
Ichirou Karauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62231423A priority Critical patent/JPS6473774A/ja
Priority to DK510488A priority patent/DK510488A/da
Priority to CA000577345A priority patent/CA1292055C/en
Priority to DE88402331T priority patent/DE3884729T2/de
Priority to EP88402331A priority patent/EP0308335B1/en
Publication of JPS6473774A publication Critical patent/JPS6473774A/ja
Priority to US07/439,008 priority patent/US5053837A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Light Receiving Elements (AREA)
JP62231423A 1987-09-16 1987-09-16 Pin photodiode of ingaas/inp Pending JPS6473774A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62231423A JPS6473774A (en) 1987-09-16 1987-09-16 Pin photodiode of ingaas/inp
DK510488A DK510488A (da) 1987-09-16 1988-09-14 Pinfotodiode af ingaas/inp-typen
CA000577345A CA1292055C (en) 1987-09-16 1988-09-14 Ingaas/inp type pin photodiodes
DE88402331T DE3884729T2 (de) 1987-09-16 1988-09-15 InGaAs/InP-PIN-Photodioden.
EP88402331A EP0308335B1 (en) 1987-09-16 1988-09-15 Ingaas/inp type pin photodiodes
US07/439,008 US5053837A (en) 1987-09-16 1989-11-20 Ingaas/inp type pin photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231423A JPS6473774A (en) 1987-09-16 1987-09-16 Pin photodiode of ingaas/inp

Publications (1)

Publication Number Publication Date
JPS6473774A true JPS6473774A (en) 1989-03-20

Family

ID=16923349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231423A Pending JPS6473774A (en) 1987-09-16 1987-09-16 Pin photodiode of ingaas/inp

Country Status (5)

Country Link
EP (1) EP0308335B1 (ja)
JP (1) JPS6473774A (ja)
CA (1) CA1292055C (ja)
DE (1) DE3884729T2 (ja)
DK (1) DK510488A (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020014517A (ko) * 2000-08-18 2002-02-25 박종섭 씨모스 이미지센서의 저전압 핀드포토다이오드 제조방법
JP2011528865A (ja) * 2008-07-21 2011-11-24 インヴィサージ テクノロジーズ インコーポレイテッド 安定高感度光検出器のための材料、作製機器、および方法、それにより作製される画像センサ
US9691931B2 (en) 2008-04-18 2017-06-27 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US9735384B2 (en) 2007-04-18 2017-08-15 Invisage Technologies, Inc. Photodetectors and photovoltaics based on semiconductor nanocrystals
US9871160B2 (en) 2007-04-18 2018-01-16 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
WO2023008372A1 (ja) * 2021-07-29 2023-02-02 京セラ株式会社 フォトダイオード及び光感応デバイス
JP2023019491A (ja) * 2021-07-29 2023-02-09 京セラ株式会社 フォトダイオード及び光感応デバイス
JP2023020026A (ja) * 2021-07-30 2023-02-09 京セラ株式会社 フォトダイオード及び光感応デバイス

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452220B1 (en) 1999-12-09 2002-09-17 The Regents Of The University Of California Current isolating epitaxial buffer layers for high voltage photodiode array
CN121712141A (zh) * 2026-02-24 2026-03-20 北京英孚瑞半导体科技有限公司 一种pin光电探测器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5497390A (en) * 1978-01-19 1979-08-01 Toshiba Corp Manufacture of semiconductor photo detector
JPS57147286A (en) * 1981-03-06 1982-09-11 Olympus Optical Co Ltd Photodetector element and manufacture thereof
JPS60130871A (ja) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp ＩｎＧａＡｓ光検出器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617192A (en) * 1982-12-21 1986-10-14 At&T Bell Laboratories Process for making optical INP devices
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5497390A (en) * 1978-01-19 1979-08-01 Toshiba Corp Manufacture of semiconductor photo detector
JPS57147286A (en) * 1981-03-06 1982-09-11 Olympus Optical Co Ltd Photodetector element and manufacture thereof
JPS60130871A (ja) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp ＩｎＧａＡｓ光検出器

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020014517A (ko) * 2000-08-18 2002-02-25 박종섭 씨모스 이미지센서의 저전압 핀드포토다이오드 제조방법
US9735384B2 (en) 2007-04-18 2017-08-15 Invisage Technologies, Inc. Photodetectors and photovoltaics based on semiconductor nanocrystals
US9871160B2 (en) 2007-04-18 2018-01-16 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US9691931B2 (en) 2008-04-18 2017-06-27 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
JP2011528865A (ja) * 2008-07-21 2011-11-24 インヴィサージ テクノロジーズ インコーポレイテッド 安定高感度光検出器のための材料、作製機器、および方法、それにより作製される画像センサ
WO2023008372A1 (ja) * 2021-07-29 2023-02-02 京セラ株式会社 フォトダイオード及び光感応デバイス
JP2023019491A (ja) * 2021-07-29 2023-02-09 京セラ株式会社 フォトダイオード及び光感応デバイス
JP2023020026A (ja) * 2021-07-30 2023-02-09 京セラ株式会社 フォトダイオード及び光感応デバイス

Also Published As

Publication number Publication date
EP0308335B1 (en) 1993-10-06
DK510488D0 (da) 1988-09-14
DE3884729T2 (de) 1994-05-05
EP0308335A2 (en) 1989-03-22
CA1292055C (en) 1991-11-12
DE3884729D1 (de) 1993-11-11
DK510488A (da) 1989-03-17
EP0308335A3 (en) 1989-12-06

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