JPS6473777A - Formation of non-superconductive oxide film - Google Patents

Formation of non-superconductive oxide film

Info

Publication number
JPS6473777A
JPS6473777A JP62231885A JP23188587A JPS6473777A JP S6473777 A JPS6473777 A JP S6473777A JP 62231885 A JP62231885 A JP 62231885A JP 23188587 A JP23188587 A JP 23188587A JP S6473777 A JPS6473777 A JP S6473777A
Authority
JP
Japan
Prior art keywords
oxide
superconductive material
magnetic field
oxygen
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62231885A
Other languages
Japanese (ja)
Other versions
JP2660246B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62231885A priority Critical patent/JP2660246B2/en
Priority to KR1019880011900A priority patent/KR910007384B1/en
Priority to EP88308627A priority patent/EP0308266A3/en
Priority to CN88107276A priority patent/CN1016388B/en
Publication of JPS6473777A publication Critical patent/JPS6473777A/en
Priority to US07/535,302 priority patent/US5162296A/en
Priority to US07/882,525 priority patent/US5262396A/en
Application granted granted Critical
Publication of JP2660246B2 publication Critical patent/JP2660246B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

PURPOSE:To prevent superconductive material from receiving distortion of an insulating material due to temperature change by applying a plasma CVD processing under magnetic resonance due to the interaction of microwave energy and magnetic field and by laminating an oxide superocnductive material and an oxide non-superconductive material. CONSTITUTION:Oxidizing gas or oxygen is introduced to a plasma generation chamber 31 through a gas system 16 and microwave and magnetic field are supplied by a microwave oscillator 14 and a magnet 15 to generate a high density plasma having magnetic resonance and to form ionized active oxygen. Then organic solution of elements which constitute a superconductive material whereto oxygen is bubbled through a bubbler 33 is introduced to a reaction system to form an oxide superconducvite film of monocrystal structure onto a thin film forming substrate 10 by a magnetic field. Then equipment organic solution which is provided with additive to destroy oxide superconducting properties. Consequently, an insulating film of oxide non-superconducitvity equipment to an oxide superconducting film is laminated preventing superconductive material from receiving distortion of an insulating film due to thermal expansion at temperature change.
JP62231885A 1987-09-16 1987-09-16 Superconducting device Expired - Fee Related JP2660246B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP62231885A JP2660246B2 (en) 1987-09-16 1987-09-16 Superconducting device
KR1019880011900A KR910007384B1 (en) 1987-09-16 1988-09-15 Formation of superconductor oxide film
EP88308627A EP0308266A3 (en) 1987-09-16 1988-09-16 Method and apparatus for forming superconducting materials
CN88107276A CN1016388B (en) 1987-09-16 1988-09-16 Method and device for forming superconducting oxide material
US07/535,302 US5162296A (en) 1987-09-16 1990-06-08 Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field
US07/882,525 US5262396A (en) 1987-09-16 1992-05-13 Plasma-enhanced CVD of oxide superconducting films by utilizing a magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62231885A JP2660246B2 (en) 1987-09-16 1987-09-16 Superconducting device

Publications (2)

Publication Number Publication Date
JPS6473777A true JPS6473777A (en) 1989-03-20
JP2660246B2 JP2660246B2 (en) 1997-10-08

Family

ID=16930554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62231885A Expired - Fee Related JP2660246B2 (en) 1987-09-16 1987-09-16 Superconducting device

Country Status (1)

Country Link
JP (1) JP2660246B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Production of superconducting ceramic film

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386687A (en) * 1977-01-10 1978-07-31 Sumitomo Electric Ind Ltd Preparation of nb3ge crystal
JPS5666080A (en) * 1979-11-05 1981-06-04 Nippon Telegr & Teleph Corp <Ntt> Tunnel-junction type josephson element and manufacture thereof
JPS5687386A (en) * 1979-12-18 1981-07-15 Nippon Telegr & Teleph Corp <Ntt> Josephson junction element and manufacture therefor
JPS56116869A (en) * 1980-02-18 1981-09-12 Shunpei Yamazaki Inductive reduced pressure gaseous phase method
JPS5797688A (en) * 1980-12-10 1982-06-17 Ibm Method of reacting surface
JPS5976488A (en) * 1982-10-26 1984-05-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconductive circuit device
JPS6410511A (en) * 1987-07-01 1989-01-13 Matsushita Electric Industrial Co Ltd Superconductor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386687A (en) * 1977-01-10 1978-07-31 Sumitomo Electric Ind Ltd Preparation of nb3ge crystal
JPS5666080A (en) * 1979-11-05 1981-06-04 Nippon Telegr & Teleph Corp <Ntt> Tunnel-junction type josephson element and manufacture thereof
JPS5687386A (en) * 1979-12-18 1981-07-15 Nippon Telegr & Teleph Corp <Ntt> Josephson junction element and manufacture therefor
JPS56116869A (en) * 1980-02-18 1981-09-12 Shunpei Yamazaki Inductive reduced pressure gaseous phase method
JPS5797688A (en) * 1980-12-10 1982-06-17 Ibm Method of reacting surface
JPS5976488A (en) * 1982-10-26 1984-05-01 Nippon Telegr & Teleph Corp <Ntt> Manufacture of superconductive circuit device
JPS6410511A (en) * 1987-07-01 1989-01-13 Matsushita Electric Industrial Co Ltd Superconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0288408A (en) * 1988-05-31 1990-03-28 Mitsubishi Metal Corp Production of superconducting ceramic film

Also Published As

Publication number Publication date
JP2660246B2 (en) 1997-10-08

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